Polycrystalline silicon is grown at a temperature of 300 °C by microwave-excited plasma enhanced chemical vapor deposition using SiH4/Xe. The grain size measured by x-ray diffraction is about 25 nm. High-density (> 1012 cm-3) plasma having very low electron temperature (<1 eV) is excited by microwave irradiation using radial line slot antenna. We present the implementation of this system for the growth of poly-Si. Low-energy (3 eV), high-flux ion bombardment utilizing xenon ion on a growing film surface activates the film surface and successfully enhances surface reaction/migration of silicon, resulting in high quality film formation at low temperatures.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1999 Jan 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films