Heteroepitaxial growth of 3C-SiC on Si(110) substrate has been successfully conducted at T=1000°C by using monomethylsilane as a single source gas. X-ray diffraction (XRD) reveals that the growth orientation of the film is rotated and a 3C-SiC(111) film is formed on this Si(110) substrate. The film quality, as evaluated with the half width of the XRD rocking curve, shows improvement from that of 3C-SiC(111)/Si(111) film. The lattice constant anisotropy (a∥-a⊥)/a∥ between the lateral and the growth directions also decreased by a factor of four from that of 3C-SiC(111)/Si(111), and the two lattice constants approach to that of bulk SC-SiC. These results indicate significant reduction in the strain of the 3C-SiC film in this 3C-SiC(111)/Si(110) system. XRD φ-scan indicates presence of double domains with almost equal areas. Copyright The Electrochemical Society.
|Number of pages||7|
|Publication status||Published - 2006 Dec 1|
|Event||State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting - Cancun, Mexico|
Duration: 2006 Oct 29 → 2006 Nov 3
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