Low temperature hermetic sealing by aluminum thermocompression bonding using tin intermediate layer

Shiro Satoh, Hideyuki Fukushi, Masayoshi Esashi, Shuji Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Aluminum with Sn intermediate layer shows very large deformation even below 400°C. Using this new layer structure as sealing metal, high yield hermetic package of MEMS was demonstrated at only 370°C without any treatment of surface oxide removal. During bonding, the bonding metal is significantly pressed (the reduction rate of thickness ∼90%), which guarantees hermeticity at high yield. Based on SEM, EDX and TEM analysis, the role of tin for hermetic sealing and the mechanism of softening of this layer structure were discussed.

Original languageEnglish
Title of host publication2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages219-221
Number of pages3
ISBN (Electronic)9781509046591
DOIs
Publication statusPublished - 2017 Jun 13
Event2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
Duration: 2017 Feb 282017 Mar 2

Publication series

Name2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
CountryJapan
CityToyama
Period17/2/2817/3/2

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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