Low temperature hermetic sealing by aluminum thermocompression bonding using tin intermediate layer

Shiro Satoh; Hideyuki Fukushi; Masayoshi Esashi; Shuji Tanaka

doi:10.1109/EDTM.2017.7947571

Low temperature hermetic sealing by aluminum thermocompression bonding using tin intermediate layer

Shiro Satoh, Hideyuki Fukushi, Masayoshi Esashi, Shuji Tanaka

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Aluminum with Sn intermediate layer shows very large deformation even below 400°C. Using this new layer structure as sealing metal, high yield hermetic package of MEMS was demonstrated at only 370°C without any treatment of surface oxide removal. During bonding, the bonding metal is significantly pressed (the reduction rate of thickness ∼90%), which guarantees hermeticity at high yield. Based on SEM, EDX and TEM analysis, the role of tin for hermetic sealing and the mechanism of softening of this layer structure were discussed.

Original language	English
Title of host publication	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	219-221
Number of pages	3
ISBN (Electronic)	9781509046591
DOIs	https://doi.org/10.1109/EDTM.2017.7947571
Publication status	Published - 2017 Jun 13
Event	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan Duration: 2017 Feb 28 → 2017 Mar 2

Publication series

Name	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Country/Territory	Japan
City	Toyama
Period	17/2/28 → 17/3/2

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDTM.2017.7947571

Cite this

Satoh, S., Fukushi, H., Esashi, M., & Tanaka, S. (2017). Low temperature hermetic sealing by aluminum thermocompression bonding using tin intermediate layer. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 219-221). [7947571] (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947571

Low temperature hermetic sealing by aluminum thermocompression bonding using tin intermediate layer. / Satoh, Shiro; Fukushi, Hideyuki; Esashi, Masayoshi et al.

2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 219-221 7947571 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Satoh, S, Fukushi, H, Esashi, M & Tanaka, S 2017, Low temperature hermetic sealing by aluminum thermocompression bonding using tin intermediate layer. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947571, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 219-221, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 17/2/28. https://doi.org/10.1109/EDTM.2017.7947571

Satoh S, Fukushi H, Esashi M, Tanaka S. Low temperature hermetic sealing by aluminum thermocompression bonding using tin intermediate layer. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 219-221. 7947571. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). doi: 10.1109/EDTM.2017.7947571

Satoh, Shiro ; Fukushi, Hideyuki ; Esashi, Masayoshi et al. / Low temperature hermetic sealing by aluminum thermocompression bonding using tin intermediate layer. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 219-221 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

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abstract = "Aluminum with Sn intermediate layer shows very large deformation even below 400°C. Using this new layer structure as sealing metal, high yield hermetic package of MEMS was demonstrated at only 370°C without any treatment of surface oxide removal. During bonding, the bonding metal is significantly pressed (the reduction rate of thickness ∼90%), which guarantees hermeticity at high yield. Based on SEM, EDX and TEM analysis, the role of tin for hermetic sealing and the mechanism of softening of this layer structure were discussed.",

author = "Shiro Satoh and Hideyuki Fukushi and Masayoshi Esashi and Shuji Tanaka",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 ; Conference date: 28-02-2017 Through 02-03-2017",

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doi = "10.1109/EDTM.2017.7947571",

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AB - Aluminum with Sn intermediate layer shows very large deformation even below 400°C. Using this new layer structure as sealing metal, high yield hermetic package of MEMS was demonstrated at only 370°C without any treatment of surface oxide removal. During bonding, the bonding metal is significantly pressed (the reduction rate of thickness ∼90%), which guarantees hermeticity at high yield. Based on SEM, EDX and TEM analysis, the role of tin for hermetic sealing and the mechanism of softening of this layer structure were discussed.

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Low temperature hermetic sealing by aluminum thermocompression bonding using tin intermediate layer

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