Low temperature growth of polycrystalline Si on polyethylene terephthalate (PET) films using pulsed-plasma CVD under near atmospheric pressure

M. Matsumoto, Y. Inayoshi, Maki Suemitsu, T. Yara, S. Nakajima, T. Uehara, Y. Toyoshima

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

High quality polycrystalline Si films deposited on polyethylene terephthalate (PET) substrates without incubation layers have been achieved with high growth rate (40 nm/min) using plasma-enhanced chemical vapor deposition (PECVD) operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge H2-diluted SiH4 in the near atmospheric pressures without the use of any inert gases such as He. Highly crystallized features were observed using Raman scattering spectroscopy and X-ray diffraction (XRD). Observations by cross-sectional transmission electron microscopy (X-TEM) suggested that the Si polycrystallites were generated directly on the PET substrates without forming the incubation layers.

Original languageEnglish
Pages (from-to)6673-6676
Number of pages4
JournalThin Solid Films
Volume516
Issue number19
DOIs
Publication statusPublished - 2008 Aug 1

Keywords

  • Atmospheric pressure
  • PECVD
  • Polycrystalline silicon
  • Polyethylene terephthalate
  • Pulsed

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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