Abstract
High quality polycrystalline Si films deposited on polyethylene terephthalate (PET) substrates without incubation layers have been achieved with high growth rate (40 nm/min) using plasma-enhanced chemical vapor deposition (PECVD) operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge H2-diluted SiH4 in the near atmospheric pressures without the use of any inert gases such as He. Highly crystallized features were observed using Raman scattering spectroscopy and X-ray diffraction (XRD). Observations by cross-sectional transmission electron microscopy (X-TEM) suggested that the Si polycrystallites were generated directly on the PET substrates without forming the incubation layers.
Original language | English |
---|---|
Pages (from-to) | 6673-6676 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 516 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2008 Aug 1 |
Keywords
- Atmospheric pressure
- PECVD
- Polycrystalline silicon
- Polyethylene terephthalate
- Pulsed
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry