Low temperature growth of polycrystalline Si on polyethylene terephthalate (PET) films using pulsed-plasma CVD under near atmospheric pressure

M. Matsumoto; Y. Inayoshi; Maki Suemitsu; T. Yara; S. Nakajima; T. Uehara; Y. Toyoshima

doi:10.1016/j.tsf.2007.11.041

Low temperature growth of polycrystalline Si on polyethylene terephthalate (PET) films using pulsed-plasma CVD under near atmospheric pressure

M. Matsumoto, Y. Inayoshi, Maki Suemitsu, T. Yara, S. Nakajima, T. Uehara, Y. Toyoshima

Information Devices Division

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

High quality polycrystalline Si films deposited on polyethylene terephthalate (PET) substrates without incubation layers have been achieved with high growth rate (40 nm/min) using plasma-enhanced chemical vapor deposition (PECVD) operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge H₂-diluted SiH₄ in the near atmospheric pressures without the use of any inert gases such as He. Highly crystallized features were observed using Raman scattering spectroscopy and X-ray diffraction (XRD). Observations by cross-sectional transmission electron microscopy (X-TEM) suggested that the Si polycrystallites were generated directly on the PET substrates without forming the incubation layers.

Original language	English
Pages (from-to)	6673-6676
Number of pages	4
Journal	Thin Solid Films
Volume	516
Issue number	19
DOIs	https://doi.org/10.1016/j.tsf.2007.11.041
Publication status	Published - 2008 Aug 1

Keywords

Atmospheric pressure
PECVD
Polycrystalline silicon
Polyethylene terephthalate
Pulsed

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2007.11.041

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Low temperature growth of polycrystalline Si on polyethylene terephthalate (PET) films using pulsed-plasma CVD under near atmospheric pressure. / Matsumoto, M.; Inayoshi, Y.; Suemitsu, Maki; Yara, T.; Nakajima, S.; Uehara, T.; Toyoshima, Y.

In: Thin Solid Films, Vol. 516, No. 19, 01.08.2008, p. 6673-6676.

Research output: Contribution to journal › Article › peer-review

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AU - Matsumoto, M.

AU - Inayoshi, Y.

AU - Suemitsu, Maki

AU - Yara, T.

AU - Nakajima, S.

AU - Uehara, T.

AU - Toyoshima, Y.

PY - 2008/8/1

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N2 - High quality polycrystalline Si films deposited on polyethylene terephthalate (PET) substrates without incubation layers have been achieved with high growth rate (40 nm/min) using plasma-enhanced chemical vapor deposition (PECVD) operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge H2-diluted SiH4 in the near atmospheric pressures without the use of any inert gases such as He. Highly crystallized features were observed using Raman scattering spectroscopy and X-ray diffraction (XRD). Observations by cross-sectional transmission electron microscopy (X-TEM) suggested that the Si polycrystallites were generated directly on the PET substrates without forming the incubation layers.

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KW - Atmospheric pressure

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KW - Polycrystalline silicon

KW - Polyethylene terephthalate

KW - Pulsed

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Low temperature growth of polycrystalline Si on polyethylene terephthalate (PET) films using pulsed-plasma CVD under near atmospheric pressure

Abstract

Keywords

ASJC Scopus subject areas

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