TY - JOUR
T1 - Low temperature growth of polycrystalline Si films using pulsed-plasma CVD under near atmospheric pressure
AU - Matsumoto, Mitsutaka
AU - Toyoshima, Yasutake
AU - Nakajima, Setsuo
AU - Suemitsu, Maki
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2008
Y1 - 2008
N2 - Low-cost fabrication of poly-Si TFT at low temperature is a key for the realization of flexible displays. By using pulsed-plasma CVD under near-atmospheric pressures, we have successfully obtained poly-Si films on polyethylene terephthalate substrates at a low temperature of 150°C. Judging from the dominance of the crystalline peak found in Raman scattering spectra as well as the absence of the incubation layer at the film/substrate interface observed in transmission electron micrographs, it is suggested that the quality of our poly-Si films is quite high. With its cost-effective and low-temperature-grown features, our high quality poly-Si produced in the pulsed-plasma CVD is expected to contribute greatly to the commercialization of flexible displays.
AB - Low-cost fabrication of poly-Si TFT at low temperature is a key for the realization of flexible displays. By using pulsed-plasma CVD under near-atmospheric pressures, we have successfully obtained poly-Si films on polyethylene terephthalate substrates at a low temperature of 150°C. Judging from the dominance of the crystalline peak found in Raman scattering spectra as well as the absence of the incubation layer at the film/substrate interface observed in transmission electron micrographs, it is suggested that the quality of our poly-Si films is quite high. With its cost-effective and low-temperature-grown features, our high quality poly-Si produced in the pulsed-plasma CVD is expected to contribute greatly to the commercialization of flexible displays.
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U2 - 10.3131/jvsj2.51.653
DO - 10.3131/jvsj2.51.653
M3 - Article
AN - SCOPUS:58549117872
VL - 51
SP - 653
EP - 656
JO - Shinku/Journal of the Vacuum Society of Japan
JF - Shinku/Journal of the Vacuum Society of Japan
SN - 0559-8516
IS - 10
ER -