Low temperature growth of polycrystalline Si films using pulsed-plasma CVD under near atmospheric pressure

Mitsutaka Matsumoto, Yasutake Toyoshima, Setsuo Nakajima, Maki Suemitsu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Low-cost fabrication of poly-Si TFT at low temperature is a key for the realization of flexible displays. By using pulsed-plasma CVD under near-atmospheric pressures, we have successfully obtained poly-Si films on polyethylene terephthalate substrates at a low temperature of 150°C. Judging from the dominance of the crystalline peak found in Raman scattering spectra as well as the absence of the incubation layer at the film/substrate interface observed in transmission electron micrographs, it is suggested that the quality of our poly-Si films is quite high. With its cost-effective and low-temperature-grown features, our high quality poly-Si produced in the pulsed-plasma CVD is expected to contribute greatly to the commercialization of flexible displays.

Original languageEnglish
Pages (from-to)653-656
Number of pages4
JournalShinku/Journal of the Vacuum Society of Japan
Volume51
Issue number10
DOIs
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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