Low-temperature growth of highly crystalline superconducting ZrN thin film on c-GaN layer by pulsed laser deposition

Ya Bin Zhu, Masahiro Ikeda, Yoshihiro Murakami, Atsushi Tsukazaki, Tomoteru Fukumura, Masashi Kawasaki

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Superconducting ZrN thin films were fabricated on c-GaN/c-Al 2O3 substrates at low growth temperatures ranging from 200 to 300°C by pulsed laser deposition. ZrN(111) thin films were epitaxially grown on c-GaN/c-Al2O3 substrates, while the growth on C-Al2O3 substrates yielded poorer crystallinity. The use of Zr metal and ZrN targets respectively resulted in higher crystallinity and a higher superconducting transition temperature of up to 7.3 K, indicating that the superconducting transition temperature is not closely related to the crystallinity. The results suggest the usefulness of a GaN layer for the growth of cubic-nitride thin films.

Original languageEnglish
Pages (from-to)L1000-L1002
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number41-44
DOIs
Publication statusPublished - 2007 Nov 9

Keywords

  • GaN
  • Pulsed laser deposition
  • Superconductivity
  • ZrN

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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