Superconducting ZrN thin films were fabricated on c-GaN/c-Al 2O3 substrates at low growth temperatures ranging from 200 to 300°C by pulsed laser deposition. ZrN(111) thin films were epitaxially grown on c-GaN/c-Al2O3 substrates, while the growth on C-Al2O3 substrates yielded poorer crystallinity. The use of Zr metal and ZrN targets respectively resulted in higher crystallinity and a higher superconducting transition temperature of up to 7.3 K, indicating that the superconducting transition temperature is not closely related to the crystallinity. The results suggest the usefulness of a GaN layer for the growth of cubic-nitride thin films.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 2007 Nov 9|
- Pulsed laser deposition
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)