Low-temperature growth of high-integrity silicon oxide films by oxygen radical generated in high-density Krypton plasma

Masaki Hirayama, Katsuyuki Sekine, Yuji Saito, Tadahiro Ohmi

Research output: Contribution to journalConference articlepeer-review

42 Citations (Scopus)

Abstract

This paper focuses attention on electrical properties of silicon oxide films grown by Kr/O2 mixed high-density and low electron temperature microwave-excited plasma at 400°C. They exhibit high growth rate, high dielectric strength, high charge-to-breakdown, and low interface trap and bulk charge enough to replace thermally grown silicon oxide.

Original languageEnglish
Pages (from-to)249-252
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1999
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 1999 Dec 51999 Dec 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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