Low-temperature growth of high-integrity silicon oxide films by oxygen radical generated in high-density Krypton plasma

Masaki Hirayama; Katsuyuki Sekine; Yuji Saito; Tadahiro Ohmi

Low-temperature growth of high-integrity silicon oxide films by oxygen radical generated in high-density Krypton plasma

Masaki Hirayama, Katsuyuki Sekine, Yuji Saito, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Conference article › peer-review

42 Citations (Scopus)

Abstract

This paper focuses attention on electrical properties of silicon oxide films grown by Kr/O₂ mixed high-density and low electron temperature microwave-excited plasma at 400°C. They exhibit high growth rate, high dielectric strength, high charge-to-breakdown, and low interface trap and bulk charge enough to replace thermally grown silicon oxide.

Original language	English
Pages (from-to)	249-252
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1999
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 1999 Dec 5 → 1999 Dec 8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Low-temperature growth of high-integrity silicon oxide films by oxygen radical generated in high-density Krypton plasma",

abstract = "This paper focuses attention on electrical properties of silicon oxide films grown by Kr/O2 mixed high-density and low electron temperature microwave-excited plasma at 400°C. They exhibit high growth rate, high dielectric strength, high charge-to-breakdown, and low interface trap and bulk charge enough to replace thermally grown silicon oxide.",

author = "Masaki Hirayama and Katsuyuki Sekine and Yuji Saito and Tadahiro Ohmi",

year = "1999",

language = "English",

pages = "249--252",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Low-temperature growth of high-integrity silicon oxide films by oxygen radical generated in high-density Krypton plasma

AU - Hirayama, Masaki

AU - Sekine, Katsuyuki

AU - Saito, Yuji

AU - Ohmi, Tadahiro

PY - 1999

Y1 - 1999

N2 - This paper focuses attention on electrical properties of silicon oxide films grown by Kr/O2 mixed high-density and low electron temperature microwave-excited plasma at 400°C. They exhibit high growth rate, high dielectric strength, high charge-to-breakdown, and low interface trap and bulk charge enough to replace thermally grown silicon oxide.

AB - This paper focuses attention on electrical properties of silicon oxide films grown by Kr/O2 mixed high-density and low electron temperature microwave-excited plasma at 400°C. They exhibit high growth rate, high dielectric strength, high charge-to-breakdown, and low interface trap and bulk charge enough to replace thermally grown silicon oxide.

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M3 - Conference article

AN - SCOPUS:0033307577

SP - 249

EP - 252

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -