Low-temperature growth of AlN thin films on ZnO templates prepared on Al2O3 substrates

In Ho Im; Jin Sub Park; Tsutomu Minegishi; Seung Hwan Park; Takashi Hanada; Ji Ho Chang; Dong Cheol Oh; Meung Whan Cho; Takafumi Yao

doi:10.1109/COMMAD.2006.4429904

Low-temperature growth of AlN thin films on ZnO templates prepared on Al₂O₃ substrates

In Ho Im, Jin Sub Park, Tsutomu Minegishi, Seung Hwan Park, Takashi Hanada, Ji Ho Chang, Dong Cheol Oh, Meung Whan Cho, Takafumi Yao

Materials Design Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have investigated the low-temperature growth of AlN layers on ZnO/MgO/c-sapphire with varying growth temperature and Al flux. Single-crystalline AlN layers can be grown at 400 °C, which is quite low compared to the conventional growth temperature of 1000°C. The interdiffusion of Al and N into ZnO layers and Zn and O into AlN layers are evaluated by SIMS. It was found that the diffusions of Al atoms were affected by the crystal quality of AlN layers and growth temperature. Very low diffusion length of Al below 100 nm into ZnO was observed at the interface between AlN and ZnO.

Original language	English
Title of host publication	COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices
Pages	156-159
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.2006.4429904
Publication status	Published - 2006
Event	2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006 - Perth, Australia Duration: 2006 Dec 6 → 2006 Dec 8

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Other

Other	2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006
Country	Australia
City	Perth
Period	06/12/6 → 06/12/8

Keywords

Al flux
Component
Low temperature AlN
RHEED
SIMS
ZnO template

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1109/COMMAD.2006.4429904

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Im, I. H., Park, J. S., Minegishi, T., Park, S. H., Hanada, T., Chang, J. H., Oh, D. C., Cho, M. W., & Yao, T. (2006). Low-temperature growth of AlN thin films on ZnO templates prepared on Al₂O₃ substrates. In COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices (pp. 156-159). [4429904] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2006.4429904

Low-temperature growth of AlN thin films on ZnO templates prepared on Al₂O₃ substrates. / Im, In Ho; Park, Jin Sub; Minegishi, Tsutomu; Park, Seung Hwan; Hanada, Takashi; Chang, Ji Ho; Oh, Dong Cheol; Cho, Meung Whan; Yao, Takafumi.

COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 2006. p. 156-159 4429904 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Im, IH, Park, JS, Minegishi, T, Park, SH, Hanada, T, Chang, JH, Oh, DC, Cho, MW & Yao, T 2006, Low-temperature growth of AlN thin films on ZnO templates prepared on Al₂O₃ substrates. in COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices., 4429904, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 156-159, 2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006, Perth, Australia, 06/12/6. https://doi.org/10.1109/COMMAD.2006.4429904

Im IH, Park JS, Minegishi T, Park SH, Hanada T, Chang JH et al. Low-temperature growth of AlN thin films on ZnO templates prepared on Al₂O₃ substrates. In COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 2006. p. 156-159. 4429904. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2006.4429904

Im, In Ho ; Park, Jin Sub ; Minegishi, Tsutomu ; Park, Seung Hwan ; Hanada, Takashi ; Chang, Ji Ho ; Oh, Dong Cheol ; Cho, Meung Whan ; Yao, Takafumi. / Low-temperature growth of AlN thin films on ZnO templates prepared on Al₂O₃ substrates. COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 2006. pp. 156-159 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

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abstract = "We have investigated the low-temperature growth of AlN layers on ZnO/MgO/c-sapphire with varying growth temperature and Al flux. Single-crystalline AlN layers can be grown at 400 °C, which is quite low compared to the conventional growth temperature of 1000°C. The interdiffusion of Al and N into ZnO layers and Zn and O into AlN layers are evaluated by SIMS. It was found that the diffusions of Al atoms were affected by the crystal quality of AlN layers and growth temperature. Very low diffusion length of Al below 100 nm into ZnO was observed at the interface between AlN and ZnO.",

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AU - Im, In Ho

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AU - Hanada, Takashi

AU - Chang, Ji Ho

AU - Oh, Dong Cheol

AU - Cho, Meung Whan

AU - Yao, Takafumi

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N2 - We have investigated the low-temperature growth of AlN layers on ZnO/MgO/c-sapphire with varying growth temperature and Al flux. Single-crystalline AlN layers can be grown at 400 °C, which is quite low compared to the conventional growth temperature of 1000°C. The interdiffusion of Al and N into ZnO layers and Zn and O into AlN layers are evaluated by SIMS. It was found that the diffusions of Al atoms were affected by the crystal quality of AlN layers and growth temperature. Very low diffusion length of Al below 100 nm into ZnO was observed at the interface between AlN and ZnO.

AB - We have investigated the low-temperature growth of AlN layers on ZnO/MgO/c-sapphire with varying growth temperature and Al flux. Single-crystalline AlN layers can be grown at 400 °C, which is quite low compared to the conventional growth temperature of 1000°C. The interdiffusion of Al and N into ZnO layers and Zn and O into AlN layers are evaluated by SIMS. It was found that the diffusions of Al atoms were affected by the crystal quality of AlN layers and growth temperature. Very low diffusion length of Al below 100 nm into ZnO was observed at the interface between AlN and ZnO.

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