@inproceedings{09d01fd9dbb8462a936117d242141744,
title = "Low-temperature growth of AlN thin films on ZnO templates prepared on Al2O3 substrates",
abstract = "We have investigated the low-temperature growth of AlN layers on ZnO/MgO/c-sapphire with varying growth temperature and Al flux. Single-crystalline AlN layers can be grown at 400 °C, which is quite low compared to the conventional growth temperature of 1000°C. The interdiffusion of Al and N into ZnO layers and Zn and O into AlN layers are evaluated by SIMS. It was found that the diffusions of Al atoms were affected by the crystal quality of AlN layers and growth temperature. Very low diffusion length of Al below 100 nm into ZnO was observed at the interface between AlN and ZnO.",
keywords = "Al flux, Component, Low temperature AlN, RHEED, SIMS, ZnO template",
author = "Im, {In Ho} and Park, {Jin Sub} and Tsutomu Minegishi and Park, {Seung Hwan} and Takashi Hanada and Chang, {Ji Ho} and Oh, {Dong Cheol} and Cho, {Meung Whan} and Takafumi Yao",
year = "2006",
doi = "10.1109/COMMAD.2006.4429904",
language = "English",
isbn = "1424405785",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",
pages = "156--159",
booktitle = "COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices",
note = "2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006 ; Conference date: 06-12-2006 Through 08-12-2006",
}