Low-temperature growth of AlN thin films on ZnO templates prepared on Al2O3 substrates

In Ho Im, Jin Sub Park, Tsutomu Minegishi, Seung Hwan Park, Takashi Hanada, Ji Ho Chang, Dong Cheol Oh, Meung Whan Cho, Takafumi Yao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated the low-temperature growth of AlN layers on ZnO/MgO/c-sapphire with varying growth temperature and Al flux. Single-crystalline AlN layers can be grown at 400 °C, which is quite low compared to the conventional growth temperature of 1000°C. The interdiffusion of Al and N into ZnO layers and Zn and O into AlN layers are evaluated by SIMS. It was found that the diffusions of Al atoms were affected by the crystal quality of AlN layers and growth temperature. Very low diffusion length of Al below 100 nm into ZnO was observed at the interface between AlN and ZnO.

Original languageEnglish
Title of host publicationCOMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices
Pages156-159
Number of pages4
DOIs
Publication statusPublished - 2006
Event2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006 - Perth, Australia
Duration: 2006 Dec 62006 Dec 8

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Other

Other2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006
CountryAustralia
CityPerth
Period06/12/606/12/8

Keywords

  • Al flux
  • Component
  • Low temperature AlN
  • RHEED
  • SIMS
  • ZnO template

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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