Low temperature growth (400 °C) of high-integrity thin silicon-oxynitride films by microwave-excited high density Kr/O2/NH3 plasma

Kazuo Ohtsubo, Yuji Saito, Masaki Hirayama, Shigetoshi Sugawa, Herzl Abaroni, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A drastic reduction of the growth temperature of oxynitride (SiON) films, which are usually grown around 1000 °C, is realized, by using microwave-excited high-density Kr/O2/NH3 plasma system, which enables their growth at 400 °C. It is shown that by the addition of only minute amount of nitrogen (0.5 % NH3 partial pressure) into a growing Si02 film, in this system, results a significant improvements in the performance of both thick (7 nm) films which operate in the Fowler-Nordheim (F-N) tunneling regime, and thin (3 nm) films which operate in the direct tunneling regime.

Original languageEnglish
Title of host publication22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages166-169
Number of pages4
ISBN (Electronic)0780376935
DOIs
Publication statusPublished - 2002 Jan 1
Event22nd Convention of Electrical and Electronics Engineers in Israel - Tel-Aviv, Israel
Duration: 2002 Dec 1 → …

Publication series

NameIEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings
Volume2002-January

Other

Other22nd Convention of Electrical and Electronics Engineers in Israel
CountryIsrael
CityTel-Aviv
Period02/12/1 → …

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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