Low-temperature growth (400 °C) of high-integrity thin silicon - Oxynitride films by microwave-excited high-density Kr - O2 - NH3 plasma

Kazuo Ohtsubo, Yuji Saito, Masaki Hirayama, Shigetoshi Sugawa, Herzl Aharoni, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

A drastic reduction of the growth temperature of oxynitride (SiON) films, which are usually grown around 1000 °C, is realized by using a microwave-excited high-density Kr-O2-NH3 plasma system, which enables their growth at 400 °C. It is shown that the addition of only a minute amount of nitrogen (0.5% NH3 partial pressure) into a growing SiO2 film, in this system, results in a significant improvements in the performance of both thick (7 nm) films, which operate in the Fowler-Nordheim tunneling regime, and thin (3 nm) films which operate in the direct tunneling regime.

Original languageEnglish
Pages (from-to)1747-1751
Number of pages5
JournalIEEE Transactions on Plasma Science
Volume32
Issue number4 III
DOIs
Publication statusPublished - 2004 Aug

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Condensed Matter Physics

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