A drastic reduction of the growth temperature of oxynitride (SiON) films, which are usually grown around 1000 °C, is realized by using a microwave-excited high-density Kr-O2-NH3 plasma system, which enables their growth at 400 °C. It is shown that the addition of only a minute amount of nitrogen (0.5% NH3 partial pressure) into a growing SiO2 film, in this system, results in a significant improvements in the performance of both thick (7 nm) films, which operate in the Fowler-Nordheim tunneling regime, and thin (3 nm) films which operate in the direct tunneling regime.
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Condensed Matter Physics