Low-temperature grown quaternary Heusler-compound Co2Mn 1-xFexSi films on Ge(111)

S. Yamada, K. Hamaya, T. Murakami, B. Varaprasad, Y. K. Takahashi, A. Rajanikanth, K. Hono, M. Miyao

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26 Citations (Scopus)


Highly ordered quaternary Co 2 Mn 1 - x Fe x Si films on Ge(111) are explored for spintronic device applications on Si-large-scale integrated circuit (LSI) platform. By using low-temperature molecular beam epitaxy techniques, relatively large magnetic moments are demonstrated for x between 0.50 and 1.0 despite extremely low temperature growth of 130 ° C. Also, L 2 1 -ordered crystal structures can be realized even on a group-IV semiconductor substrate, Ge, compatible with Si-LSI technologies. By the point contact Andreev reflection method, the spin polarization of Co 2 Mn 0.5 Fe 0.5 Si films is estimated to be P = 0.58 ± 0.02. We believe that this study will be a first step for integration of high-performance spintronic applications with next ultra LSI.

Original languageEnglish
Article number07B113
JournalJournal of Applied Physics
Issue number7
Publication statusPublished - 2011 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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