Highly ordered quaternary Co 2 Mn 1 - x Fe x Si films on Ge(111) are explored for spintronic device applications on Si-large-scale integrated circuit (LSI) platform. By using low-temperature molecular beam epitaxy techniques, relatively large magnetic moments are demonstrated for x between 0.50 and 1.0 despite extremely low temperature growth of 130 ° C. Also, L 2 1 -ordered crystal structures can be realized even on a group-IV semiconductor substrate, Ge, compatible with Si-LSI technologies. By the point contact Andreev reflection method, the spin polarization of Co 2 Mn 0.5 Fe 0.5 Si films is estimated to be P = 0.58 ± 0.02. We believe that this study will be a first step for integration of high-performance spintronic applications with next ultra LSI.
ASJC Scopus subject areas
- Physics and Astronomy(all)