Low temperature grown Be-doped InAlP band offset reduction layer to p-type ZnSe

K. Iwata, H. Asahi, T. Ogura, J. Sumino, S. Gonda, A. Ohki, Y. Kawaguchi, T. Matsuoka

Research output: Contribution to journalConference articlepeer-review

Abstract

To solve the difficulty of achieving low resistance ohmic contact to p-type ZnSe, the use of an intermediate p-type InAlP layer to p-type ZnSe as a valence band offset reduction layer is studied by gas source MBE (molecular beam epitaxy). It is found that the surface morphology of the In0.5Al0.5P layers grown on (001) ZnSe becomes better as growth temperature is decreased. The further use of the group III-flux modulated growth method produces a better surface morphology. It is found that the hole concentrations as high as 2×1018cm-3 are easily obtained for p-type InAlP layers grown even at low temperature of 350 °C, although a higher Be cell temperature is required than that for a 500 °C grown p-type InAlP due to decreased electrical activity of Be in InAlP. Despite the very high Be concentrations, the Be precipitation/segregation is not observed. These results suggest that the Be-doped InAlP layer can be used as an intermediate layer to form the low resistance ohmic contact to p-type ZnSe.

Original languageEnglish
Pages (from-to)183-186
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
Duration: 1995 May 91995 May 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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