Low temperature grown be-doped InAIP band offset reduction layer to p-type ZnSe

K. Iwata, H. Asahi, T. Ogura, J. Sumino, S. Gonda, A. Ohki, Y. Kawaguchi, T. Matsuoka

Research output: Contribution to journalArticlepeer-review


To solve the difficulty of achieving low resistance ohmic contact to p-type ZnSe, the use of an intermediate p-type InAlP layer to p-type ZnSe as a valence band offset reduction layer is studied by gas source molecular beam epitaxy. It is found that hole concentrations as high as 2 × 1018 cm3 are easily obtained for p-type InAlP layers grown on GaAs even at low temperature of 350°C, although a higher Be cell temperature is required than that for a 500°C grown p-type InAlP due to the decreased electrical activity of Be in InAlP. Despite the very high Be concentrations, the Be precipitation/segregation is not observed. It was difficult to obtain the same hole concentration of InAlP layers grown on ZnSe as that on GaAs. However, the insertion of only several monolayers of GaAs between ZnSe and InAlP makes it possible to avoid faceting growth of InAlP and to improve the electrical properties of Be-doped InAlP grown on ZnSe. These results suggest that the Be-doped InAlP layer can be used as an intermediate layer to form the low resistance ohmic contact to p-type ZnSe.

Original languageEnglish
Pages (from-to)637-641
Number of pages5
JournalJournal of Electronic Materials
Issue number5
Publication statusPublished - 1996 Apr
Externally publishedYes


  • Band offset reduction layer
  • Gas source molecular beam epitaxy (GSMBE)
  • InAlP
  • Ohmic contact
  • ZnSe

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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