Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: A reflection high-energy electron diffraction study

A. Shen, H. Ohno, Y. Horikoshi, S. P. Guo, Y. Ohno, F. Matsukura

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

Reflection high-energy electron diffraction (RHEED) was used for in situ monitoring of the growth behavior of GaAs at various temperatures. The growth was performed on both singular and 2° off (001) GaAs substrates. The temperature dependence as well as the As/Ga beam equivalent pressure ratio dependence of the RHEED specular beam intensity oscillation characteristics were studied. Strong RHEED oscillations were observed at low temperatures under As/Ga ratios far from the stoichiometric condition.

Original languageEnglish
Pages (from-to)382-386
Number of pages5
JournalApplied Surface Science
Volume130-132
DOIs
Publication statusPublished - 1998 Jan 1
EventProceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn
Duration: 1997 Oct 271997 Oct 30

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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