Arsenic-implanted self-aligned Al-gate MOSFET's have been successfully fabricated by employing ultra-clean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of the high-energy-beam-induced metal sputter contamination have enabled us to form low-leakage pη junctions by furnace annealing at a temperature as low as 450°C. The fabricated Al-gate MOSFETs have exhibited good electrical characteristics, thus demonstrating a large potential for application to realizing ultra-high-speed integrated circuits.
|Number of pages||3|
|Publication status||Published - 1992|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 1992 Aug 26 → 1992 Aug 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92/8/26 → 92/8/28|
ASJC Scopus subject areas