Low-temperature furnace-annealed aluminum-gate MOSFET for ultra-high-speed integrated circuits

K. Kotani, T. Ohmi, S. Shimonishi, T. Migita, H. Komori, T. Shibata, T. Nitta

Research output: Contribution to conferencePaper

5 Citations (Scopus)

Abstract

Arsenic-implanted self-aligned Al-gate MOSFET's have been successfully fabricated by employing ultra-clean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of the high-energy-beam-induced metal sputter contamination have enabled us to form low-leakage pη junctions by furnace annealing at a temperature as low as 450°C. The fabricated Al-gate MOSFETs have exhibited good electrical characteristics, thus demonstrating a large potential for application to realizing ultra-high-speed integrated circuits.

Original languageEnglish
Pages431-433
Number of pages3
DOIs
Publication statusPublished - 1992
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • Engineering(all)

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    Kotani, K., Ohmi, T., Shimonishi, S., Migita, T., Komori, H., Shibata, T., & Nitta, T. (1992). Low-temperature furnace-annealed aluminum-gate MOSFET for ultra-high-speed integrated circuits. 431-433. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, . https://doi.org/10.7567/ssdm.1992.pd3-4