Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

M. Matsumoto, Y. Inayoshi, M. Suemitsu, E. Miyamoto, T. Yara, S. Nakajima, T. Uehara, Y. Toyoshima

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Silicon nitride (SiN X ) film fabrication on polyethylene terephthalate (PET) substrates has been achieved at a low temperature (∼100 °C) by plasma enhanced chemical vapor deposition operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge of SiH 4 , H 2 and N 2 in near atmospheric pressures without the use of any inert gases such as He. The deposited films were characterized by X-ray photoelectron spectroscopy. Cross sections of the films were observed by scanning electron microscope (SEM). Despite the use of N 2 in place of NH 3 , a high deposition rate (290 nm/min) was obtained by this near-atmospheric-pressure plasma.

Original languageEnglish
Pages (from-to)6208-6210
Number of pages3
JournalApplied Surface Science
Volume254
Issue number19
DOIs
Publication statusPublished - 2008 Jul 30

Keywords

  • Atmospheric pressure
  • PECVD
  • Polyethylene terephthalate
  • Silicon nitride

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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