Low-temperature formation of silicon nitride film by direct nitridation employing high-density and low-energy ion bombardment

Yuji Saito, Katsuyuki Sekine, Masaki Hirayama, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

High-integrity silicon nitride films can be obtained at a temperature of 400°C using a newly developed high-density (> 1012 cm-3) plasma characterized by low ion bombardment energies of below 7 cV. It was found for the first time that stoichiometric silicon nitride can be formed at a temperature of 400°C by precise control of nitrogen partial pressure to generate N2+ in plasma. The growth rate and the electrical properties of this silicon nitride are similar to those of thermally grown nitride. Moreover, hysteresis of the C-V curve attributed to charge traps in the silicon nitride film disappeared with the addition of hydrogen to Ar/N2 plasma, and the leakage current of the nitride film was decreased dramatically by irradiating in Ar/N2/H2 plasma after Ar/N2 plasma nitridation. These technologies are very promising for fabricating feature metal substrate silicon-on-insulator (SOI) devices and silicon nitride gate metal-insulator-semiconductor field effect transistors (MISFETs).

Original languageEnglish
Pages (from-to)2329-2332
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number4 B
Publication statusPublished - 1999 Dec 1

Keywords

  • Direct nitridation
  • High-density plasma
  • Ion bombardment
  • Low temperature
  • Silicon nitride

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Low-temperature formation of silicon nitride film by direct nitridation employing high-density and low-energy ion bombardment'. Together they form a unique fingerprint.

Cite this