Low temperature formation of low resistivity W contact with ultra thin mixed layer on molecular layer epitaxially-grown GaAs

F. Matsumoto; J. I. Nishizawa; Y. Oyama; P. Plotka; Y. Oshida; K. Suto

doi:10.1109/ISCS.1998.711609

Low temperature formation of low resistivity W contact with ultra thin mixed layer on molecular layer epitaxially-grown GaAs

F. Matsumoto, J. I. Nishizawa, Y. Oyama, P. Plotka, Y. Oshida, K. Suto

ENG - Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The precursor for the W CVD on GaAs used is W(CO)₆. The contact resistance in W/GaAs is obtained by the transmission line measurements of patterned W on heavily doped GaAs grown by MLE. The dependence of the contact resistance on the surface treatment prior to the W CVD is also studied. Barrier height of W/GaAs structure is measured by the temperature dependence of I-V characteristics in reference to the contact resistance. The W/GaAs interface is analyzed using SIMS and RBS. Contact resistance of non-alloyed structure achieved are 3×10^-2 ω cm² for n-type GaAs and below 5×10^-8 ω cm² for p-type respectively. From the physical analysis, the mixed layer in W/GaAs interface is estimated less than 20 Å.

Original language	English
Title of host publication	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
Editors	Mike Melloch, Mark A. Reed
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	179-182
Number of pages	4
ISBN (Print)	0780338839, 9780780338838
DOIs	https://doi.org/10.1109/ISCS.1998.711609
Publication status	Published - 1997 Jan 1
Event	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States Duration: 1997 Sep 8 → 1997 Sep 11

Publication series

Name	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Other

Other	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
Country/Territory	United States
City	San Diego
Period	97/9/8 → 97/9/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/ISCS.1998.711609

Cite this

Matsumoto, F., Nishizawa, J. I., Oyama, Y., Plotka, P., Oshida, Y., & Suto, K. (1997). Low temperature formation of low resistivity W contact with ultra thin mixed layer on molecular layer epitaxially-grown GaAs. In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 179-182). [711609] (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711609

Low temperature formation of low resistivity W contact with ultra thin mixed layer on molecular layer epitaxially-grown GaAs. / Matsumoto, F.; Nishizawa, J. I.; Oyama, Y. et al.

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. ed. / Mike Melloch; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. p. 179-182 711609 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsumoto, F, Nishizawa, JI, Oyama, Y, Plotka, P, Oshida, Y & Suto, K 1997, Low temperature formation of low resistivity W contact with ultra thin mixed layer on molecular layer epitaxially-grown GaAs. in M Melloch & MA Reed (eds), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997., 711609, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997, Institute of Electrical and Electronics Engineers Inc., pp. 179-182, 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997, San Diego, United States, 97/9/8. https://doi.org/10.1109/ISCS.1998.711609

Matsumoto F, Nishizawa JI, Oyama Y, Plotka P, Oshida Y, Suto K. Low temperature formation of low resistivity W contact with ultra thin mixed layer on molecular layer epitaxially-grown GaAs. In Melloch M, Reed MA, editors, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. Institute of Electrical and Electronics Engineers Inc. 1997. p. 179-182. 711609. (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). doi: 10.1109/ISCS.1998.711609

Matsumoto, F. ; Nishizawa, J. I. ; Oyama, Y. et al. / Low temperature formation of low resistivity W contact with ultra thin mixed layer on molecular layer epitaxially-grown GaAs. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. editor / Mike Melloch ; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. pp. 179-182 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

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abstract = "The precursor for the W CVD on GaAs used is W(CO)6. The contact resistance in W/GaAs is obtained by the transmission line measurements of patterned W on heavily doped GaAs grown by MLE. The dependence of the contact resistance on the surface treatment prior to the W CVD is also studied. Barrier height of W/GaAs structure is measured by the temperature dependence of I-V characteristics in reference to the contact resistance. The W/GaAs interface is analyzed using SIMS and RBS. Contact resistance of non-alloyed structure achieved are 3×10-2 ω cm2 for n-type GaAs and below 5×10-8 ω cm2 for p-type respectively. From the physical analysis, the mixed layer in W/GaAs interface is estimated less than 20 {\AA}.",

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AU - Plotka, P.

AU - Oshida, Y.

AU - Suto, K.

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N2 - The precursor for the W CVD on GaAs used is W(CO)6. The contact resistance in W/GaAs is obtained by the transmission line measurements of patterned W on heavily doped GaAs grown by MLE. The dependence of the contact resistance on the surface treatment prior to the W CVD is also studied. Barrier height of W/GaAs structure is measured by the temperature dependence of I-V characteristics in reference to the contact resistance. The W/GaAs interface is analyzed using SIMS and RBS. Contact resistance of non-alloyed structure achieved are 3×10-2 ω cm2 for n-type GaAs and below 5×10-8 ω cm2 for p-type respectively. From the physical analysis, the mixed layer in W/GaAs interface is estimated less than 20 Å.

AB - The precursor for the W CVD on GaAs used is W(CO)6. The contact resistance in W/GaAs is obtained by the transmission line measurements of patterned W on heavily doped GaAs grown by MLE. The dependence of the contact resistance on the surface treatment prior to the W CVD is also studied. Barrier height of W/GaAs structure is measured by the temperature dependence of I-V characteristics in reference to the contact resistance. The W/GaAs interface is analyzed using SIMS and RBS. Contact resistance of non-alloyed structure achieved are 3×10-2 ω cm2 for n-type GaAs and below 5×10-8 ω cm2 for p-type respectively. From the physical analysis, the mixed layer in W/GaAs interface is estimated less than 20 Å.

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Low temperature formation of low resistivity W contact with ultra thin mixed layer on molecular layer epitaxially-grown GaAs

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