@inproceedings{ee2a1b233eb646b1a399d369550b18a2,
title = "Low temperature formation of low resistivity W contact with ultra thin mixed layer on molecular layer epitaxially-grown GaAs",
abstract = "The precursor for the W CVD on GaAs used is W(CO)6. The contact resistance in W/GaAs is obtained by the transmission line measurements of patterned W on heavily doped GaAs grown by MLE. The dependence of the contact resistance on the surface treatment prior to the W CVD is also studied. Barrier height of W/GaAs structure is measured by the temperature dependence of I-V characteristics in reference to the contact resistance. The W/GaAs interface is analyzed using SIMS and RBS. Contact resistance of non-alloyed structure achieved are 3×10-2 ω cm2 for n-type GaAs and below 5×10-8 ω cm2 for p-type respectively. From the physical analysis, the mixed layer in W/GaAs interface is estimated less than 20 {\AA}.",
author = "F. Matsumoto and Nishizawa, {J. I.} and Y. Oyama and P. Plotka and Y. Oshida and K. Suto",
year = "1997",
month = jan,
day = "1",
doi = "10.1109/ISCS.1998.711609",
language = "English",
isbn = "0780338839",
series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "179--182",
editor = "Mike Melloch and Reed, {Mark A.}",
booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
note = "24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",
}