Low temperature formation of low resistivity W contact with ultra thin mixed layer on molecular layer epitaxially-grown GaAs

F. Matsumoto, J. I. Nishizawa, Y. Oyama, P. Plotka, Y. Oshida, K. Suto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The precursor for the W CVD on GaAs used is W(CO)6. The contact resistance in W/GaAs is obtained by the transmission line measurements of patterned W on heavily doped GaAs grown by MLE. The dependence of the contact resistance on the surface treatment prior to the W CVD is also studied. Barrier height of W/GaAs structure is measured by the temperature dependence of I-V characteristics in reference to the contact resistance. The W/GaAs interface is analyzed using SIMS and RBS. Contact resistance of non-alloyed structure achieved are 3×10-2 ω cm2 for n-type GaAs and below 5×10-8 ω cm2 for p-type respectively. From the physical analysis, the mixed layer in W/GaAs interface is estimated less than 20 Å.

Original languageEnglish
Title of host publicationProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
EditorsMike Melloch, Mark A. Reed
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages179-182
Number of pages4
ISBN (Print)0780338839, 9780780338838
DOIs
Publication statusPublished - 1997 Jan 1
Event24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States
Duration: 1997 Sep 81997 Sep 11

Publication series

NameProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Other

Other24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
Country/TerritoryUnited States
CitySan Diego
Period97/9/897/9/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of 'Low temperature formation of low resistivity W contact with ultra thin mixed layer on molecular layer epitaxially-grown GaAs'. Together they form a unique fingerprint.

Cite this