Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy

Hideki Nakazawa, Maki Suemitsu

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)

Abstract

By using monomethylsilane (MMS:H3Si-CH3), we have formed a Si1-xCx interfacial buffer layer for 3C-SiC/Si(100) heteroepitaxy at substrate temperature Tf of as low as 450-650°C, which is compared to the conventional carbonization temperature of 900 °C or higher. The buffer layer allows the subsequent growth of high-quality single-crystalline 3C-SiC films at 900 °C without formation of voids in the Si substrate at the interface. The grown 3C-SiC films degrade for Tf<450 or >650 °C. The low processing temperature as well as the suppressed Si outdiffusion can be related to the inclusion of both Si-H and Si-C bonds within the MMS molecule.

Original languageEnglish
Pages (from-to)755-757
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number6
DOIs
Publication statusPublished - 2001 Aug 6

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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