Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric

A. Tsukazaki, A. Ohtomo, D. Chiba, Y. Ohno, H. Ohno, M. Kawasaki

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

A top-gate field-effect device with atomic-layer-deposited Al 2O3 dielectric was fabricated to investigate magnetotransport properties of two-dimensional electron gas (2DEG) at a semi-insulating ZnO-Mg0.12Zn0.88O double heterostructure grown by laser molecular-beam epitaxy. Hall mobility monotonically increased as the density of accumulated electrons increased. The highest mobility at 2 K was recorded to be 5000 cm2 V-1 s-1 at a 2DEG density of 1.2× 1012 cm-2, which is comparable to the previously reported value for a metallic ZnO Mg0.2Zn 0.8 O heterostructure. Insulator-to-metal transition was observed at a critical density of 6× 1011 cm-2. The metallic-state channel exhibited Shubnikov-de Haas oscillations, demonstrating an electric-field tunable quantum device based on transparent oxide semiconductor.

Original languageEnglish
Article number241905
JournalApplied Physics Letters
Volume93
Issue number24
DOIs
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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