Low-temperature fabrication of transparent conducting polycrystalline Nb-doped TiO2 films by sputtering

N. L.H. Hoang; N. Yamada; T. Hitosugi; J. Kasai; S. Nakao; T. Shimada; T. Hasegawa

Low-temperature fabrication of transparent conducting polycrystalline Nb-doped TiO₂ films by sputtering

N. L.H. Hoang, N. Yamada, T. Hitosugi, J. Kasai, S. Nakao, T. Shimada, T. Hasegawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents a low-temperature (≃300°C) process for preparing transparent conducting anatase Nb-doped TiO₂ (TNO) films on glass by sputtering. An amorphous film composed of an oxygen-rich bottom layer and oxygen-deficient top layer was deposited at room temperature. This film was then annealed in a reducing atmosphere in order to crystallize anatase. The oxygen-rich bottom layer behaved as a seed layer during crystallization of the top layer, resulting in lower crystallization temperature and significant improvement in crystallinity. The TNO polycrystalline films obtained by post-deposition annealing at 400°C exhibited resistivity of 6.4 × 10^-4 Ω cm and absorption of less than 10% in the visible region. The low-temperature process developed here was applied to fabrication of TNO films on plastics and glass with low glass-transition temperature.

Original language	English
Title of host publication	Transparent Conductors and Semiconductors for Optoelectronics
Pages	25-30
Number of pages	6
Publication status	Published - 2009
Event	2009 MRS Fall Meeting - Boston, MA, United States Duration: 2009 Nov 30 → 2009 Dec 4

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1109
ISSN (Print)	0272-9172

Other

Other	2009 MRS Fall Meeting
Country	United States
City	Boston, MA
Period	09/11/30 → 09/12/4

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Low-temperature fabrication of transparent conducting polycrystalline Nb-doped TiO₂ films by sputtering. / Hoang, N. L.H.; Yamada, N.; Hitosugi, T.; Kasai, J.; Nakao, S.; Shimada, T.; Hasegawa, T.

Transparent Conductors and Semiconductors for Optoelectronics. 2009. p. 25-30 (Materials Research Society Symposium Proceedings; Vol. 1109).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hoang, NLH, Yamada, N, Hitosugi, T, Kasai, J, Nakao, S, Shimada, T & Hasegawa, T 2009, Low-temperature fabrication of transparent conducting polycrystalline Nb-doped TiO₂ films by sputtering. in Transparent Conductors and Semiconductors for Optoelectronics. Materials Research Society Symposium Proceedings, vol. 1109, pp. 25-30, 2009 MRS Fall Meeting, Boston, MA, United States, 09/11/30.

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abstract = "This paper presents a low-temperature (≃300°C) process for preparing transparent conducting anatase Nb-doped TiO2 (TNO) films on glass by sputtering. An amorphous film composed of an oxygen-rich bottom layer and oxygen-deficient top layer was deposited at room temperature. This film was then annealed in a reducing atmosphere in order to crystallize anatase. The oxygen-rich bottom layer behaved as a seed layer during crystallization of the top layer, resulting in lower crystallization temperature and significant improvement in crystallinity. The TNO polycrystalline films obtained by post-deposition annealing at 400°C exhibited resistivity of 6.4 × 10-4 Ω cm and absorption of less than 10% in the visible region. The low-temperature process developed here was applied to fabrication of TNO films on plastics and glass with low glass-transition temperature.",

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AU - Hoang, N. L.H.

AU - Yamada, N.

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AU - Kasai, J.

AU - Nakao, S.

AU - Shimada, T.

AU - Hasegawa, T.

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AB - This paper presents a low-temperature (≃300°C) process for preparing transparent conducting anatase Nb-doped TiO2 (TNO) films on glass by sputtering. An amorphous film composed of an oxygen-rich bottom layer and oxygen-deficient top layer was deposited at room temperature. This film was then annealed in a reducing atmosphere in order to crystallize anatase. The oxygen-rich bottom layer behaved as a seed layer during crystallization of the top layer, resulting in lower crystallization temperature and significant improvement in crystallinity. The TNO polycrystalline films obtained by post-deposition annealing at 400°C exhibited resistivity of 6.4 × 10-4 Ω cm and absorption of less than 10% in the visible region. The low-temperature process developed here was applied to fabrication of TNO films on plastics and glass with low glass-transition temperature.

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