TY - GEN
T1 - Low-temperature fabrication of transparent conducting polycrystalline Nb-doped TiO2 films by sputtering
AU - Hoang, N. L.H.
AU - Yamada, N.
AU - Hitosugi, T.
AU - Kasai, J.
AU - Nakao, S.
AU - Shimada, T.
AU - Hasegawa, T.
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2009
Y1 - 2009
N2 - This paper presents a low-temperature (≃300°C) process for preparing transparent conducting anatase Nb-doped TiO2 (TNO) films on glass by sputtering. An amorphous film composed of an oxygen-rich bottom layer and oxygen-deficient top layer was deposited at room temperature. This film was then annealed in a reducing atmosphere in order to crystallize anatase. The oxygen-rich bottom layer behaved as a seed layer during crystallization of the top layer, resulting in lower crystallization temperature and significant improvement in crystallinity. The TNO polycrystalline films obtained by post-deposition annealing at 400°C exhibited resistivity of 6.4 × 10-4 Ω cm and absorption of less than 10% in the visible region. The low-temperature process developed here was applied to fabrication of TNO films on plastics and glass with low glass-transition temperature.
AB - This paper presents a low-temperature (≃300°C) process for preparing transparent conducting anatase Nb-doped TiO2 (TNO) films on glass by sputtering. An amorphous film composed of an oxygen-rich bottom layer and oxygen-deficient top layer was deposited at room temperature. This film was then annealed in a reducing atmosphere in order to crystallize anatase. The oxygen-rich bottom layer behaved as a seed layer during crystallization of the top layer, resulting in lower crystallization temperature and significant improvement in crystallinity. The TNO polycrystalline films obtained by post-deposition annealing at 400°C exhibited resistivity of 6.4 × 10-4 Ω cm and absorption of less than 10% in the visible region. The low-temperature process developed here was applied to fabrication of TNO films on plastics and glass with low glass-transition temperature.
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M3 - Conference contribution
AN - SCOPUS:77954246258
SN - 9781617383922
T3 - Materials Research Society Symposium Proceedings
SP - 25
EP - 30
BT - Transparent Conductors and Semiconductors for Optoelectronics
T2 - 2009 MRS Fall Meeting
Y2 - 30 November 2009 through 4 December 2009
ER -