Low-temperature epitaxial growth of in-situ heavily B-doped Si1-xGex films using ultraclean LPCVD

A. Moriya, M. Sakuraba, T. Matsuura, Junichi Murota, I. Kawashima, N. Yabumoto

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

In-situ heavy doping of B into Si1-xGex epitaxial films on the Si(100)substrate have been investigated at 550 °C in a SiH4(6.0 Pa)-GeH4(0.1-6.0 Pa)-B2H6(1.25×10-5-3.75×10-2Pa)-H2(17-24 Pa) gas mixture by using an ultraclean hot-wall low-pressure CVD system. The deposition rate increased with increasing GeH4 partial pressure, and it decreased with increasing B2H6 partial pressure only at the higher GeH4 partial pressure. As the B2H6 partial pressure increased, the Ge fraction scarcely changed although the lattice constant of the film decreased. These characteristics can be explained by the suppression of both the SiH4 and GeH4 adsorption/reactions in a similar degree due to Ba2H6 adsorption on the Si-Ge and/or Ge-Ge bond sites. The B concentration in the film increase proportionally up to 1022 cm-3 with increasing B2H6 partial pressure.

Original languageEnglish
Pages (from-to)349-354
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume533
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1998 Apr 131998 Apr 17

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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