Low-temperature epitaxial growth of in-situ B-doped Si1-x Gex films

J. Murota, F. Honma, T. Yoshida, K. Goto, T. Maeda, K. Aizawa, Y. Sawada

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

We report in-situ boron doping of Si1-xGex films epitaxially grown on Si(100) by low-pressure chemical vapor deposition (LPCVD) processes. The experiments are performed in an ultraclean hot-wall system using ultra-pure SiH4-GeH4-H2 -B2H6 gas mixtures. The incorporation rate of B was proportional to the B2H6 partial pressure and was larger for Ge-rich films. It was proposed that the increase in B incorporation rate with increasing Ge fraction was caused by the larger surface adsorption rate of B-hydride on Ge atoms than on Si atoms. Since the incorporation rate of B increased with exposure time of B2H6 during Si1-xGex deposition at early stage, it was suggested that B doping was limited by the B-hydride adsorption rate. Hall measurements showed that carrier concentration was equal to B concentration in the range 3×1017-2×1020cm-3 regardless of the Ge fraction, and Hall mobility passed through a minimum value for Si0.75Ge0.25 films regardless of the films thickness.

Original languageEnglish
Pages (from-to)427-432
Number of pages6
JournalJournal De Physique. IV : JP
Volume3
Issue number3
DOIs
Publication statusPublished - 1993 Jan 1
EventProceedings of the 9th European Conference on Chemical Vapour Deposition - Tampere, Finl
Duration: 1993 Aug 221993 Aug 27

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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