Low-temperature epitaxial growth of CaF 2 on (NH 4 ) 2 S x -treated GaAs(100) surface

Daisei Shoji, Michio Niwano, Nobuo Miyamoto

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1 Citation (Scopus)

Abstract

We have investigated the method of forming a high-quality CaF 2 film onto a GaAs(100) surface. We used X-ray diffractometry and Rutherford backscattering spectrometry to characterize the film quality. We demonstrate that pretreatment of GaAs wafer surfaces by (NH 4 ) 2 S X solution leads to the epitaxial growth of CaF 2 on the GaAs(100) surface at a substrate temperature of around 200°C, We suggest that both oxide removal by (NH 4 ) 2 S x etching and sulfur passivation of the surface are crucial to the low-temperature epitaxial growth of CaF 2 . At a substrate temperature of 300°C, the epitaxy quality of CaF 2 is deteriorated.

Original languageEnglish
Pages (from-to)443-446
Number of pages4
JournalApplied Surface Science
Volume117-118
DOIs
Publication statusPublished - 1997 Jun 2

Keywords

  • (NH ) S treatment
  • CaF
  • Epitaxial growth
  • GaAs(100) surface

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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