Low temperature epitaxial growth of anatase TaON using anatase TiO2 seed layer

Atsushi Suzuki, Yasushi Hirose, Daichi Oka, Shoichiro Nakao, Tomoteru Fukumura, Tetsuya Hasegawa

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Anatase TaON is a promising semiconducting oxynitride with high Hall mobility. However, the high temperature (≥ 750 °C) required for its epitaxial growth on (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 by nitrogen-plasma-assisted pulsed laser deposition, examined in our previous work, disadvantages its practical application. In this study, we adopted two approaches to decrease the growth temperature: the use of a substrate with better lattice matching to anatase TaON and the introduction of an anatase TiO2 seed layer. The growth temperature was successfully reduced to 650 °C by the latter approach. This indicated that the edge-shared MX6 octahedral network of the anatase structure effectively stabilizes anatase TaON.

Original languageEnglish
Article number080303
JournalJapanese journal of applied physics
Volume54
Issue number8
DOIs
Publication statusPublished - 2015 Aug 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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