TY - JOUR
T1 - Low temperature epitaxial growth of anatase TaON using anatase TiO2 seed layer
AU - Suzuki, Atsushi
AU - Hirose, Yasushi
AU - Oka, Daichi
AU - Nakao, Shoichiro
AU - Fukumura, Tomoteru
AU - Hasegawa, Tetsuya
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/8/1
Y1 - 2015/8/1
N2 - Anatase TaON is a promising semiconducting oxynitride with high Hall mobility. However, the high temperature (≥ 750 °C) required for its epitaxial growth on (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 by nitrogen-plasma-assisted pulsed laser deposition, examined in our previous work, disadvantages its practical application. In this study, we adopted two approaches to decrease the growth temperature: the use of a substrate with better lattice matching to anatase TaON and the introduction of an anatase TiO2 seed layer. The growth temperature was successfully reduced to 650 °C by the latter approach. This indicated that the edge-shared MX6 octahedral network of the anatase structure effectively stabilizes anatase TaON.
AB - Anatase TaON is a promising semiconducting oxynitride with high Hall mobility. However, the high temperature (≥ 750 °C) required for its epitaxial growth on (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 by nitrogen-plasma-assisted pulsed laser deposition, examined in our previous work, disadvantages its practical application. In this study, we adopted two approaches to decrease the growth temperature: the use of a substrate with better lattice matching to anatase TaON and the introduction of an anatase TiO2 seed layer. The growth temperature was successfully reduced to 650 °C by the latter approach. This indicated that the edge-shared MX6 octahedral network of the anatase structure effectively stabilizes anatase TaON.
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U2 - 10.7567/JJAP.54.080303
DO - 10.7567/JJAP.54.080303
M3 - Article
AN - SCOPUS:84938401214
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8
M1 - 080303
ER -