Low-temperature electrical characteristics of strained-Si MOSFETs

Nobuyuki Sugii, Katsuyoshi Washio

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The low-temperature electrical characteristics of strained-Si metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated as a step towards determining the mechanisms responsible for the improved mobility of these devices. If the increased mobility is due to a reduction in the inter-valley (-band) phonon scattering, the increase should fall with temperature. We found that the ratios by which both the electron and hole mobility of a strained-Si MOSFET are lower than those for a conventional Si MOSFET do not significantly decrease with temperature. The result indicates that a reduction in average effective mass many make a greater contribution to the improved mobility than the reduction of phonon scattering.

Original languageEnglish
Pages (from-to)1924-1927
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 B
DOIs
Publication statusPublished - 2003 Apr

Keywords

  • CMOS
  • Germanium
  • MOSFET
  • Mobility
  • Scattering
  • Silicon
  • Strain

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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