The low-temperature electrical characteristics of strained-Si metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated as a step towards determining the mechanisms responsible for the improved mobility of these devices. If the increased mobility is due to a reduction in the inter-valley (-band) phonon scattering, the increase should fall with temperature. We found that the ratios by which both the electron and hole mobility of a strained-Si MOSFET are lower than those for a conventional Si MOSFET do not significantly decrease with temperature. The result indicates that a reduction in average effective mass many make a greater contribution to the improved mobility than the reduction of phonon scattering.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|Publication status||Published - 2003 Apr|
ASJC Scopus subject areas
- Physics and Astronomy(all)