Low-temperature deposition of silicon dioxide films by photoinduced decomposition of tetraethoxysilane

Michio Niwano, Satoshi Hirano, Maki Suemitsu, Nobuo Miyamoto, Koji Honma

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


A new method has been proposed for depositing silicon dioxide films on semiconductors at low temperatures by using ultraviolet(UV)lights. In this method, UV light emitted from a low-pressure Hg lamp is irradiated onto spin-on material which contains tetraethoxysilane Si(OC2H5)4. The light decomposes this compound, leading to the formation of silicon dioxide films. It is found that the physical properties of silicon dioxide films deposited on silicon are similar to those of oxide films obtained by conventional deposition methods, Evidence is presented indicating that UV light irradiation plays an important role in the formation of silicon oxides. “1223” phase.

Original languageEnglish
Pages (from-to)L1310-L1313
JournalJapanese journal of applied physics
Issue number7 A
Publication statusPublished - 1989 Jul
Externally publishedYes


  • Low-temperature deposition
  • Mercury lamp
  • Silicon dioxide film
  • Spin-on material
  • Tetraethoxysilane
  • UV light

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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