Low-temperature deposition of α-Al 2 O 3 films by laser chemical vapor deposition using a diode laser

Yu You, Akihiko Ito, Rong Tu, Takashi Goto

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

We prepared Al 2 O 3 films by laser chemical vapor deposition (LCVD) using a diode laser and aluminum acetylacetonate (Al(acac) 3 ) precursors and investigated the effects of laser power (P L ), deposition temperature (T dep ), and total pressure (P tot ) in a reaction chamber on the crystal phase, microstructure, and deposition rate (R dep ). An amorphous phase was obtained at P L = 50 W, whereas an α-phase was obtained at P L > 100 W. At P L = 150 and 200 W (1 0 4)- and (0 1 2)-oriented α-Al 2 O 3 films were obtained, respectively. The R dep of α-Al 2 O 3 films increases with decreasing P L and P tot . Single-phase α-Al 2 O 3 film was obtained at T dep = 928 K, which is about 350 K lower than that obtained by conventional thermal CVD using Al(acac) 3 precursor.

Original languageEnglish
Pages (from-to)3906-3911
Number of pages6
JournalApplied Surface Science
Volume256
Issue number12
DOIs
Publication statusPublished - 2010 Apr 1

Keywords

  • Laser CVD
  • Low-temperature deposition

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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