Low temperature Cu sinter joining on different metallization substrates and its reliability evaluation with a high current density

Chuantong Chen, Aya Iwaki, Aiji Suetake, Kazuhiko Sugiura, Kiyoshi Kanie, Katsuaki Suganuma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Cu sinter joining technology have got a lot attention for next-generation wide band gap (WBG) power modules which will subject a high temperature above 250 °C and a high current density. In this study, bonding performances of Cu sinter joining on different metallization substrates were investigated at a low temperature low pressure in N2 atmosphere. Die shear strength and fracture behavior of the joint structure on bare Cu substrate and different metallized Cu substrates including Cu/Ni-P, Cu/Ni-P/Au, Cu/Ni-P/Co-W-P, Cu/Ni-P/Pd-P/Au were evaluated. The results show that Cu sinter joining on bare Cu substrate possessed the highest shear strength above 60 MPa, further better than that other Cu substrate with metallization layers. In addition, reliability evaluation of Cu die attached structure on bare Cu substrate and Ni-P metallized substrate during a power cycling in a high current density of 814.8 A/cm2 were also investigated. The results show almost not on-resistance change after 3000 cycles for the both cases.

Original languageEnglish
Title of host publication2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages387-390
Number of pages4
ISBN (Electronic)9784886864222
DOIs
Publication statusPublished - 2021 May 30
Event33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 - Virtual, Nagoya, Japan
Duration: 2021 May 302021 Jun 3

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2021-May
ISSN (Print)1063-6854

Conference

Conference33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021
Country/TerritoryJapan
CityVirtual, Nagoya
Period21/5/3021/6/3

Keywords

  • Cu sinter joining
  • high power density
  • metallization
  • power cycling
  • power modules

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Low temperature Cu sinter joining on different metallization substrates and its reliability evaluation with a high current density'. Together they form a unique fingerprint.

Cite this