Low temperature crystallization of a-ingazno4 films

Akihiko Hiroe, Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We have investigated the annealing behavior of a-IGZO4 and found out that crystallization takes place at relatively low temperature of around 400ºC when deposited by pure argon and then annealed in argon ambient. When deposited in 4%O2/Ar, on the other hand, only small network change is observed even after the annealing at 600ºC in argon. These results show that oxygen vacancy, which is created during deposition and/or argon annealing, induces the lattice defects and helps create a crystalline phase of InGaZnO4.

Original languageEnglish
Pages (from-to)1251-1253
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume43
Issue number1
DOIs
Publication statusPublished - 2012
Event49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States
Duration: 2012 Jun 32012 Jun 8

Keywords

  • Crystallization
  • InGaZnO
  • TFT

ASJC Scopus subject areas

  • Engineering(all)

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