Low temperature crystallization of a-ingazno4 films

Akihiko Hiroe; Tetsuya Goto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1002/j.2168-0159.2012.tb06025.x

Low temperature crystallization of a-ingazno₄ films

Akihiko Hiroe, Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We have investigated the annealing behavior of a-IGZO₄ and found out that crystallization takes place at relatively low temperature of around 400ºC when deposited by pure argon and then annealed in argon ambient. When deposited in 4%O₂/Ar, on the other hand, only small network change is observed even after the annealing at 600ºC in argon. These results show that oxygen vacancy, which is created during deposition and/or argon annealing, induces the lattice defects and helps create a crystalline phase of InGaZnO₄.

Original language	English
Pages (from-to)	1251-1253
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	43
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2012.tb06025.x
Publication status	Published - 2012
Event	49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States Duration: 2012 Jun 3 → 2012 Jun 8

Keywords

Crystallization
InGaZnO
TFT

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1002/j.2168-0159.2012.tb06025.x

Cite this

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title = "Low temperature crystallization of a-ingazno4 films",

abstract = "We have investigated the annealing behavior of a-IGZO4 and found out that crystallization takes place at relatively low temperature of around 400ºC when deposited by pure argon and then annealed in argon ambient. When deposited in 4%O2/Ar, on the other hand, only small network change is observed even after the annealing at 600ºC in argon. These results show that oxygen vacancy, which is created during deposition and/or argon annealing, induces the lattice defects and helps create a crystalline phase of InGaZnO4.",

keywords = "Crystallization, InGaZnO, TFT",

author = "Akihiko Hiroe and Tetsuya Goto and Shigetoshi Sugawa and Tadahiro Ohmi",

note = "Publisher Copyright: {\textcopyright} 2012 SID.; 49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

year = "2012",

doi = "10.1002/j.2168-0159.2012.tb06025.x",

language = "English",

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journal = "Digest of Technical Papers - SID International Symposium",

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T1 - Low temperature crystallization of a-ingazno4 films

AU - Hiroe, Akihiko

AU - Goto, Tetsuya

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

PY - 2012

Y1 - 2012

N2 - We have investigated the annealing behavior of a-IGZO4 and found out that crystallization takes place at relatively low temperature of around 400ºC when deposited by pure argon and then annealed in argon ambient. When deposited in 4%O2/Ar, on the other hand, only small network change is observed even after the annealing at 600ºC in argon. These results show that oxygen vacancy, which is created during deposition and/or argon annealing, induces the lattice defects and helps create a crystalline phase of InGaZnO4.

AB - We have investigated the annealing behavior of a-IGZO4 and found out that crystallization takes place at relatively low temperature of around 400ºC when deposited by pure argon and then annealed in argon ambient. When deposited in 4%O2/Ar, on the other hand, only small network change is observed even after the annealing at 600ºC in argon. These results show that oxygen vacancy, which is created during deposition and/or argon annealing, induces the lattice defects and helps create a crystalline phase of InGaZnO4.

KW - Crystallization

KW - InGaZnO

KW - TFT

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SP - 1251

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