We have investigated the annealing behavior of a-IGZO4 and found out that crystallization takes place at relatively low temperature of around 400ºC when deposited by pure argon and then annealed in argon ambient. When deposited in 4%O2/Ar, on the other hand, only small network change is observed even after the annealing at 600ºC in argon. These results show that oxygen vacancy, which is created during deposition and/or argon annealing, induces the lattice defects and helps create a crystalline phase of InGaZnO4.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2012 Jan 1|
|Event||49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States|
Duration: 2012 Jun 3 → 2012 Jun 8
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