Low-temperature conduction and giant negative magnetoresistance in III-V-based diluted magnetic semiconductor: (Ga, Mn)As/GaAs

A. Oiwa, S. Katsumoto, A. Endo, M. Hirasawa, Y. Iye, F. Matsukura, A. Shen, Y. Sugawara, H. Ohno

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We have studied the transport and magnetic properties of Ga1-xMnxAs/GaAs with different Mn content (0.015 < x < 0.071) for temperatures 40 mK-250 K and magnetic fields 0-15 T. Ferromagnetic order was observed in the samples with x > 0.02. With incresing Mn concentration, the system undergoes an insulator-metal-insulator transition. Low temperature hopping conduction on the insulator side of the metal-insulator boundaries exhibits giant negative magnetoresistance.

Original languageEnglish
Pages (from-to)775-779
Number of pages5
JournalPhysica B: Condensed Matter
Volume249-251
DOIs
Publication statusPublished - 1998 Jun 17

Keywords

  • Diluted magnetic semiconductors
  • Ferromagnetism
  • Giant negative magnetoresistance
  • Metal-insulator transition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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