Low-temperature characteristics of ambipolar SiO2/Si/SiO 2 Hall-bar devices

Kei Takashina, Benjamin Gaillard, Yukinori Ono, Yoshiro Hirayama

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We present the basic low-temperature characteristics of SiO 2/Si/SiO2 Hall-bar devices, where each Hall-bar arm is split into p- and n-type Ohmic contacts made by selective area ion-implantation doping of boron and phosphorus, respectively. Magnetotransport measurements of a 22-nm-thick Si(001) quantum well show Shubnikov-de Haas oscillations of two-dimensional holes in addition to the electrons generated at both sides of the quantum well. We discuss applications for extracting the physical characteristics of this technologically vital material system.

Original languageEnglish
Pages (from-to)2596-2598
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
Publication statusPublished - 2007 Apr 24

Keywords

  • Ambipolar
  • Hall-bar
  • Magnetotransport
  • Mobility
  • Quantum Hall effect
  • Silicon
  • Silicon-on-insulator (SOI) electrons and holes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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