TY - GEN
T1 - Low-temperature bonding technologies for photonics applications
AU - Higurashi, E.
PY - 2013
Y1 - 2013
N2 - This paper focuses on low temperature bonding technology and its applications in photonics devices in use in various fields. Fabrication of a wafer bonded two-layer germanium (Ge) structure for far-infrared detector application was demonstrated by surface activated bonding (SAB) method at room temperature. Very lowresistive Ge/Ge junctions were obtained by SAB method. The feasibility of low-temperature 3-D integration of optical semiconductor chips was also demonstrated by Au-Au SAB in ambient air. Using this technique, compact and thin micro encoders and laser Doppler velocimeters (2.8 mm × 2.8 mm × 1 mm thick) were developed.
AB - This paper focuses on low temperature bonding technology and its applications in photonics devices in use in various fields. Fabrication of a wafer bonded two-layer germanium (Ge) structure for far-infrared detector application was demonstrated by surface activated bonding (SAB) method at room temperature. Very lowresistive Ge/Ge junctions were obtained by SAB method. The feasibility of low-temperature 3-D integration of optical semiconductor chips was also demonstrated by Au-Au SAB in ambient air. Using this technique, compact and thin micro encoders and laser Doppler velocimeters (2.8 mm × 2.8 mm × 1 mm thick) were developed.
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U2 - 10.1149/05007.0351ecst
DO - 10.1149/05007.0351ecst
M3 - Conference contribution
AN - SCOPUS:84885735529
SN - 9781607683551
T3 - ECS Transactions
SP - 351
EP - 362
BT - Semiconductor Wafer Bonding 12
PB - Electrochemical Society Inc.
T2 - 12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting
Y2 - 7 October 2012 through 12 October 2012
ER -