Low temperature, beam-orientation-dependent, lattice-plane-independent, and damage-free oxidation for three-dimensional structure by neutral beam oxidation

Physics & Astronomy

• neutral beams 100%
• oxidation 64%
• damage 62%
• oxide films 26%
• leakage 16%
• field effect transistors 15%
• fins 11%
• stress concentration 11%
• metal oxide semiconductors 10%
• nonuniformity 9%
• transistors 7%
• oxides 6%

Engineering & Materials Science

• Oxidation 77%
• Oxide films 36%
• Temperature 35%
• Dielectric films 28%
• Gate dielectrics 27%
• Leakage currents 20%
• Gates (transistor) 13%
• MOSFET devices 11%
• Field effect transistors 10%
• Hot Temperature 9%
• Stress concentration 8%
• Oxides 8%
• Transistors 8%