Low-temperature-atomic-layer-deposition of SiO2 with tris(dimethylamino)silane (TDMAS) and ozone using temperature controlled water vapor treatment

F. Hirose; Y. Kinoshita; S. Shibuya; Y. Narita; H. Miya; K. Hirahara; Y. Kimura; M. Niwano

doi:10.1149/1.3122106

Low-temperature-atomic-layer-deposition of SiO₂ with tris(dimethylamino)silane (TDMAS) and ozone using temperature controlled water vapor treatment

F. Hirose, Y. Kinoshita, S. Shibuya, Y. Narita, H. Miya, K. Hirahara, Y. Kimura, M. Niwano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

Silicon dioxide (SiO₂) films deposited using Atomic Layer Deposition (ALD) technique from tris(dimethylamino)silane (TDMAS) and ozone as precursors on Si(100) surfaces at room temperature were investigated by infrared absorption spectroscopy with a multiple internal reflection geometry. TDMAS dissociatively adsorbs on OH sites of hydroxylated Si surfaces and ozone irradiation is effective to remove the hydroaminocarbon adsorbates introduced during the TDMAS adsorption. After the ozone treatment, treatments with H ₂O vapor at substrate temperatures around 160°C allow regeneration of OH sites for the TDMAS adsorption. The TDMAS adsorption and the ozone treatment at room temperature followed by the H₂O treatment at 160 °C enable the cyclic deposition of SiO₂. I-V measurements performed on MOS capacitors with SiO₂ films reveal that the deposited films have breakdown electric fields in the range 3-11 MV/cm. These measurements together with C-V measurements indicate that the present ALD technique is suitable for the deposition of SiO₂ films for MOS capacitors.

Original language	English
Title of host publication	Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
Publisher	Electrochemical Society Inc.
Pages	417-426
Number of pages	10
Edition	2
ISBN (Electronic)	9781607680604
ISBN (Print)	9781566777100
DOIs	https://doi.org/10.1149/1.3122106
Publication status	Published - 2009
Externally published	Yes
Event	International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society - San Francisco, CA, United States Duration: 2009 May 24 → 2009 May 29

Publication series

Name	ECS Transactions
Number	2
Volume	19
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society
Country/Territory	United States
City	San Francisco, CA
Period	09/5/24 → 09/5/29

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3122106

Cite this

Hirose, F., Kinoshita, Y., Shibuya, S., Narita, Y., Miya, H., Hirahara, K., Kimura, Y., & Niwano, M. (2009). Low-temperature-atomic-layer-deposition of SiO₂ with tris(dimethylamino)silane (TDMAS) and ozone using temperature controlled water vapor treatment. In Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10 (2 ed., pp. 417-426). (ECS Transactions; Vol. 19, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.3122106

Low-temperature-atomic-layer-deposition of SiO₂ with tris(dimethylamino)silane (TDMAS) and ozone using temperature controlled water vapor treatment. / Hirose, F.; Kinoshita, Y.; Shibuya, S. et al.

Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10. 2. ed. Electrochemical Society Inc., 2009. p. 417-426 (ECS Transactions; Vol. 19, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hirose, F, Kinoshita, Y, Shibuya, S, Narita, Y, Miya, H, Hirahara, K, Kimura, Y & Niwano, M 2009, Low-temperature-atomic-layer-deposition of SiO₂ with tris(dimethylamino)silane (TDMAS) and ozone using temperature controlled water vapor treatment. in Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10. 2 edn, ECS Transactions, no. 2, vol. 19, Electrochemical Society Inc., pp. 417-426, International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society, San Francisco, CA, United States, 09/5/24. https://doi.org/10.1149/1.3122106

Hirose F, Kinoshita Y, Shibuya S, Narita Y, Miya H, Hirahara K et al. Low-temperature-atomic-layer-deposition of SiO₂ with tris(dimethylamino)silane (TDMAS) and ozone using temperature controlled water vapor treatment. In Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10. 2 ed. Electrochemical Society Inc. 2009. p. 417-426. (ECS Transactions; 2). doi: 10.1149/1.3122106

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abstract = "Silicon dioxide (SiO2) films deposited using Atomic Layer Deposition (ALD) technique from tris(dimethylamino)silane (TDMAS) and ozone as precursors on Si(100) surfaces at room temperature were investigated by infrared absorption spectroscopy with a multiple internal reflection geometry. TDMAS dissociatively adsorbs on OH sites of hydroxylated Si surfaces and ozone irradiation is effective to remove the hydroaminocarbon adsorbates introduced during the TDMAS adsorption. After the ozone treatment, treatments with H 2O vapor at substrate temperatures around 160°C allow regeneration of OH sites for the TDMAS adsorption. The TDMAS adsorption and the ozone treatment at room temperature followed by the H2O treatment at 160 °C enable the cyclic deposition of SiO2. I-V measurements performed on MOS capacitors with SiO2 films reveal that the deposited films have breakdown electric fields in the range 3-11 MV/cm. These measurements together with C-V measurements indicate that the present ALD technique is suitable for the deposition of SiO2 films for MOS capacitors.",

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AB - Silicon dioxide (SiO2) films deposited using Atomic Layer Deposition (ALD) technique from tris(dimethylamino)silane (TDMAS) and ozone as precursors on Si(100) surfaces at room temperature were investigated by infrared absorption spectroscopy with a multiple internal reflection geometry. TDMAS dissociatively adsorbs on OH sites of hydroxylated Si surfaces and ozone irradiation is effective to remove the hydroaminocarbon adsorbates introduced during the TDMAS adsorption. After the ozone treatment, treatments with H 2O vapor at substrate temperatures around 160°C allow regeneration of OH sites for the TDMAS adsorption. The TDMAS adsorption and the ozone treatment at room temperature followed by the H2O treatment at 160 °C enable the cyclic deposition of SiO2. I-V measurements performed on MOS capacitors with SiO2 films reveal that the deposited films have breakdown electric fields in the range 3-11 MV/cm. These measurements together with C-V measurements indicate that the present ALD technique is suitable for the deposition of SiO2 films for MOS capacitors.

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