Low-temperature and damage-free transition metal and magnetic material etching using a new metallic complex reaction

Toshihisa Nozawa, Ryo Miyama, Shinji Kubota, Kazuki Moyama, Tomihiro Kubota, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A neutral beam etching process has been developed that achieves damage-free (chemically and physically) etching. Recently, it was found that transition metals could be etched using neutral beam etching through metallic complex reactions. In this process, a neutral beam is extracted from a plasma generation region into a reaction chamber. Complex reactant gases are injected into a reaction chamber which is screened from the plasma during neutral beam etching. In this paper, etching of Pt and CoFeB, candidate materials for MRAM structures by a neutral beam system is described. It was found that etch rate enhancement of Pt/CoFeB surfaces resulted from their exposure to a neutral beam from Ar/O2 plasma with simultaneous injection of EtOH/acetic acid into the reaction chamber. Etching damage was also evaluated and no magnetic hysteresis degradation has been observed. Neutral beam etching technology has the capability to make breakthrough for fabricating MRAM device.

Original languageEnglish
Title of host publicationAdvanced Etch Technology for Nanopatterning IV
EditorsQinghuang Lin, Sebastian U. Engelmann
PublisherSPIE
ISBN (Electronic)9781628415308
DOIs
Publication statusPublished - 2015
EventSPIE Conference on Advanced Etch Technology for Nanopatterning IV - San Jose, United States
Duration: 2015 Feb 232015 Feb 25

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9428
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherSPIE Conference on Advanced Etch Technology for Nanopatterning IV
CountryUnited States
CitySan Jose
Period15/2/2315/2/25

Keywords

  • Metallic Complex Reaction
  • Neutral Beam Etching
  • Transition metal Etching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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