Low-Temperature Al-Al Thermocompression Bonding with Sn Oxidation Protect Layer for Wafer-Level Hermetic Sealing

Shiro Satoh; Hideyuki Fukushi; Masayoshi Esashi; Shuji Tanaka

doi:10.1002/ecj.11975

Low-Temperature Al-Al Thermocompression Bonding with Sn Oxidation Protect Layer for Wafer-Level Hermetic Sealing

Shiro Satoh, Hideyuki Fukushi, Masayoshi Esashi, Shuji Tanaka

Research output: Contribution to journal › Article

Abstract

This paper describes hermetic seal wafer bonding using Al covered with thin Sn as an antioxidation layer. The bonding temperature is below 400 °C, which is the maximum temperature of CMOS-LSI backend process. Gas tightness over 3000 h at room temperature and sealing stability through heat treatment under a typical reflow condition of 260 °C for 10 min were confirmed for samples bonded at 370 °C and 380 °C. A key for successful hermetic seal bonding is relatively high bonding pressure and stress concentration on sealing frames as narrow as several micrometers. The results of SEM and EDX analysis suggested that the bonding was due to direct Al-Al bonding, while Sn was diffused sparsely among Al grain boundaries. The developed bonding technology is usable for wafer-level integration of LSI and MEMS in conjunction with hermetic sealing.

Original language	English
Pages (from-to)	43-50
Number of pages	8
Journal	Electronics and Communications in Japan
Volume	100
Issue number	8
DOIs	https://doi.org/10.1002/ecj.11975
Publication status	Published - 2017 Aug

Keywords

Al-Al thermocompression bonding
CMOS-LSI backend process
Sn antioxidation layer
hermetic seal

ASJC Scopus subject areas

Signal Processing
Physics and Astronomy(all)
Computer Networks and Communications
Electrical and Electronic Engineering
Applied Mathematics

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Satoh, S., Fukushi, H., Esashi, M., & Tanaka, S. (2017). Low-Temperature Al-Al Thermocompression Bonding with Sn Oxidation Protect Layer for Wafer-Level Hermetic Sealing. Electronics and Communications in Japan, 100(8), 43-50. https://doi.org/10.1002/ecj.11975

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