Low-temperature (≤600 °c) growth of high-quality InxGa1-xN (x > 0.3) by metalorganic vapor phase epitaxy using NH3 decomposition catalyst

Akio Yamamoto, Kazuki Kodama, Takashi Matsuoka, Masaaki Kuzuhara

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Abstract

InxGa1-xN (x > 0.3) films on GaN/sapphire templates were grown by NH3 decomposition catalyst-assisted metalorganic vapor phase epitaxy (CAMOVPE). NiO-based pellets were used as a catalyst. Even at a temperature lower than 500 °C, single-crystal In0.3Ga0.7N films were grown without the incorporation of metallic components (In, Ga) or the cubic phase. In contrast with the case of InN growth using the same catalyst [A. Yamamoto et al., Jpn. J. Appl. Phys. 55, 05FD04 (2016)], no marked grain growth or hydrogen etching was observed in In0.3Ga0.7N. Samples grown at a temperature ≤500 °C showed a full-width at half-maximum of the (0002) X-ray rocking curve as small as 10 arcmin or smaller. The carrier concentration in nominally undoped In0.3Ga0.7N grown using the catalyst was higher by about 4 orders of magnitude than that in conventional MOVPE samples. Secondary ion mass spectroscopy analysis revealed that such a higher carrier concentration was due to the marked reduction in carbon contamination level in the films.

Original languageEnglish
Article number041001
JournalJapanese journal of applied physics
Volume56
Issue number4
DOIs
Publication statusPublished - 2017

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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