Low-temperature (≥400°C) growth of InN by metalorganic vapor phase epitaxy using an NH3 decomposition catalyst

Akio Yamamoto, Kazuki Kodama, Naoteru Shigekawa, Takashi Matsuoka, Masaaki Kuzuhara

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

In this paper, we report the metalorganic vapor phase epitaxial (MOVPE) growth of InN using a NiO-based pellet-type NH3 decomposition catalyst. The use of the catalyst significantly changes the growth behavior of InN, which is dependent on the growth temperature (Tg). Continuous InN films without the incorporation of metallic In and a cubic phase are grown at Tg = 400-480 °C. An InN film grown at Tg ≈ 450 °C has a full-width at half maximum (FWHM) of 376 arcsec in the X-ray rocking curve for InN(0002) reflection. At Tg; 500 °C, the deposition rate of InN rapidly decreases and the deposited films become discontinuous with large (ca. 1 μm) pyramidal grains of InN. Depositions are scarcely obtained at Tg; 600 °C. Such changes in the growth behavior of InN are governed by the NH3 decomposition.

Original languageEnglish
Article number05FD04
JournalJapanese journal of applied physics
Volume55
Issue number5
DOIs
Publication statusPublished - 2016 May

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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