Low-resistivity m-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method

Kazunobu Kojima, Yusuke Tsukada, Erika Furukawa, Makoto Saito, Yutaka Mikawa, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito, Akira Uedono, Shigefusa F. Chichibu

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22 Citations (Scopus)

Abstract

An m-plane freestanding GaN substrate satisfying both low resistivity (? = 8.5 ×10%3Ω cm) and a low point-defect concentration, being applicable to vertically conducting power-switching devices, was grown by hydride vapor phase epitaxy on a nearly bowing-free bulk GaN seed wafer synthesized by the ammonothermal method in supercritical ammonia using an acidic mineralizer. Its threading dislocation and basal-plane stakingfault densities were approximately 104cm-2 and lower than 100cm-1, respectively. A record-long fast-component photoluminescence lifetime of 2.07 ns at room temperature was obtained for the near-band-edge emission, reflecting a significantly low concentration of nonradiative recombination centers composed of Ga vacancies.

Original languageEnglish
Article number095501
JournalApplied Physics Express
Volume8
Issue number9
DOIs
Publication statusPublished - 2015 Sep 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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