Low resistivity bcc-Ta/TaNx metal gate MNSFETs having plane gate structure featuring fully low-temperature processing below 450°C

H. Shimada, I. Ohshima, S. I. Nakao, M. Nakagawa, K. Kanemoto, M. Hirayama, S. Sugawa, T. Ohmi

Research output: Contribution to conferencePaperpeer-review

15 Citations (Scopus)

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Engineering & Materials Science

Chemical Compounds