Low resistive ALD TiN metal gate using TDMAT precursor for high performance MOSFET

T. Hayashida, K. Endo, Y. X. Liu, T. Kamei, T. Matsukawa, S. Ouchi, K. Sakamoto, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura, M. Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution