Low resistive ALD TiN metal gate using TDMAT precursor for high performance MOSFET

T. Hayashida, K. Endo, Y. X. Liu, T. Kamei, T. Matsukawa, S. Ouchi, K. Sakamoto, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Fingerprint

Dive into the research topics of 'Low resistive ALD TiN metal gate using TDMAT precursor for high performance MOSFET'. Together they form a unique fingerprint.

Engineering & Materials Science