Low resistive ALD TiN metal gate using TDMAT precursor for high performance MOSFET

T. Hayashida, K. Endo, Y. X. Liu, T. Kamei, T. Matsukawa, S. Ouchi, K. Sakamoto, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have demonstrated the effect of the resistivity reduction of the ALD-TiN film using TDMAT precursor by modifying the NH3 process (both initial exposure and PDA processes). It was found that the resistivity of the ALD TiN was significantly reduced by extending tNH3 and increasing TPDA by 700°C. Moreover, by employing the NH3 PDA, an increase in TiN peak intensity was detected from Ti 2p by XPS analysis and Ti : N ratio of approximately 1:1 was achieved. As a result of the evaluation of the electrical characteristics of TiN-gate MOSFETs, superior performance was achieved in the case of ALD TiN.

Original languageEnglish
Title of host publication2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs
Publication statusPublished - 2010 Oct 22
Externally publishedYes
Event2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States
Duration: 2010 Jun 132010 Jun 14

Publication series

Name2010 Silicon Nanoelectronics Workshop, SNW 2010

Other

Other2010 15th Silicon Nanoelectronics Workshop, SNW 2010
CountryUnited States
CityHonolulu, HI
Period10/6/1310/6/14

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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