Low radio frequency biased electron cyclotron resonance plasma etching

Seiji Samukawa, Tomohiko Toyosato, Etsuo Wani

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

A radio frequency (rf) biased electron cyclotron resonance (ECR) plasma etching technology has been developed to realize an efficient ion acceleration in high density and uniform ECR plasma for accurate Al-Si-Cu alloy film etching. In this technology, the substrate is located at the ECR position (875 G position) and the etching is carried out with a 400 kHz rf bias power. This Al-Si-Cu etching technology achieves a high etching rate (more than 5000 A/min), excellent etching uniformity (within ±5%), highly anisotropic etching, and Cu residue-free etching in only Cl2 gas plasma. These etching characteristics are accomplished by the combination of the dense and uniform ECR plasma generation at the ECR position with the efficient accelerated ion flux at the ECR position by using 400 kHz rf bias.

Original languageEnglish
Pages (from-to)896-898
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number9
DOIs
Publication statusPublished - 1991 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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