Low quiescent current SiGe HBT driver amplifier having P-MOSFET current mirror type self bias control circuit

S. Shinjo; K. Mori; H. Joba; N. Suematsu

doi:10.1109/EUMA.2001.338896

Low quiescent current SiGe HBT driver amplifier having P-MOSFET current mirror type self bias control circuit

S. Shinjo, K. Mori, H. Joba, N. Suematsu

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

An L-band low quiescent current and low distortion SiGe HBT driver amplifier having a self base bias control circuit is described. Since the size of this circuit is small and it does not need external control circuit, it is easy to integrate with the driver amplifier on single chip. According to the output power level, the self base bias control circuit, which is the combination of a P-MOSFET current mirror and a conventional constant base coltage circuit, automatically controls the base voltage and allows low quiescent current at low output power level and low distortion at high output power level. The simulated result shows that the proposed driver amplifier realized P1dB improvement of 3.0dB compared with the conventional constant base voltage driver amplifier under the same quiescent current condition. The fabricated amplifier achieved P1dB of 14.9dBm with quiescent currrent of 15.3mA.

Original language	English
DOIs	https://doi.org/10.1109/EUMA.2001.338896
Publication status	Published - 2001 Jan 1
Externally published	Yes
Event	2001 31st European Microwave Conference, EuMC 2001 - London, United Kingdom Duration: 2001 Sep 24 → 2001 Sep 26

Other

Other	2001 31st European Microwave Conference, EuMC 2001
Country	United Kingdom
City	London
Period	01/9/24 → 01/9/26

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/EUMA.2001.338896

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title = "Low quiescent current SiGe HBT driver amplifier having P-MOSFET current mirror type self bias control circuit",

abstract = "An L-band low quiescent current and low distortion SiGe HBT driver amplifier having a self base bias control circuit is described. Since the size of this circuit is small and it does not need external control circuit, it is easy to integrate with the driver amplifier on single chip. According to the output power level, the self base bias control circuit, which is the combination of a P-MOSFET current mirror and a conventional constant base coltage circuit, automatically controls the base voltage and allows low quiescent current at low output power level and low distortion at high output power level. The simulated result shows that the proposed driver amplifier realized P1dB improvement of 3.0dB compared with the conventional constant base voltage driver amplifier under the same quiescent current condition. The fabricated amplifier achieved P1dB of 14.9dBm with quiescent currrent of 15.3mA.",

author = "S. Shinjo and K. Mori and H. Joba and N. Suematsu",

year = "2001",

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doi = "10.1109/EUMA.2001.338896",

language = "English",

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T1 - Low quiescent current SiGe HBT driver amplifier having P-MOSFET current mirror type self bias control circuit

AU - Shinjo, S.

AU - Mori, K.

AU - Joba, H.

AU - Suematsu, N.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - An L-band low quiescent current and low distortion SiGe HBT driver amplifier having a self base bias control circuit is described. Since the size of this circuit is small and it does not need external control circuit, it is easy to integrate with the driver amplifier on single chip. According to the output power level, the self base bias control circuit, which is the combination of a P-MOSFET current mirror and a conventional constant base coltage circuit, automatically controls the base voltage and allows low quiescent current at low output power level and low distortion at high output power level. The simulated result shows that the proposed driver amplifier realized P1dB improvement of 3.0dB compared with the conventional constant base voltage driver amplifier under the same quiescent current condition. The fabricated amplifier achieved P1dB of 14.9dBm with quiescent currrent of 15.3mA.

AB - An L-band low quiescent current and low distortion SiGe HBT driver amplifier having a self base bias control circuit is described. Since the size of this circuit is small and it does not need external control circuit, it is easy to integrate with the driver amplifier on single chip. According to the output power level, the self base bias control circuit, which is the combination of a P-MOSFET current mirror and a conventional constant base coltage circuit, automatically controls the base voltage and allows low quiescent current at low output power level and low distortion at high output power level. The simulated result shows that the proposed driver amplifier realized P1dB improvement of 3.0dB compared with the conventional constant base voltage driver amplifier under the same quiescent current condition. The fabricated amplifier achieved P1dB of 14.9dBm with quiescent currrent of 15.3mA.

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