Low-pressure metalorganic chemical vapor deposition of a Cu Ga Se 2/Cu Al Se 2 heterostructure

Shigefusa Chichibu, Ryo Sudo, Nobuhide Yoshida, Yoshiyuki Harada, Mei Uchida, Satoru Matsumoto

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A single-heterostructure of CuGaSe2/CuAlSe2 chalcopyrite semiconductors was successfully grown epitaxially on a GaAs(001) substrate using a low-pressure metal organic chemical vapor deposition technique. The valence-band discontinuity for the CuGaSe2/CuAlSe2 heterointerface was estimated to be 0.8±0.1 eV by means of X-ray photoelectron spectroscopy. The CuGaSe2/CuAlSe2 structure was found to have the straddling-type heterointerface, and the band discontinuity was found to be distributed mainly in the valence band.

Original languageEnglish
Pages (from-to)L286-L289
JournalJapanese journal of applied physics
Volume33
Issue number3
DOIs
Publication statusPublished - 1994 Mar
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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