Low-pressure chemical vapour deposition of silicon and germanium on silicon using contamination-minimized processing

N. Mikoshiba, J. Murota, A. Kohlhase

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Low-pressure Si and Ge chemical vapour deposition (CVD) was investigated using contamination-minimized processing. A drastic decrease of Si epitaxial temperature compared with conventional CVD was obtained due to the reduction of native oxide by clean reactive gases. It was also found that Si CVD can be partly selective on Si/SiO2 during a certain incubation period using only SiH4 and H2 gases, without addition of HCl. For Ge CVD, perfect selectivity and epitaxy on Si was obtained at low temperatures such as 400°C. The via-hole filling behaviour of Ge shows that there are two epitaxial growth mechanisms; step flow and dangling-bond dominated growth.

Original languageEnglish
Pages (from-to)1087-1090
Number of pages4
JournalVacuum
Volume41
Issue number4-6
DOIs
Publication statusPublished - 1990

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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