Low-power SiGe HBT and circuit technology for future quasi-millimeter-wave wireless communications

K. Washio, N. Shiramizu, M. Miura, T. Nakamura, K. Oda, T. Masuda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SiGe HBTs and their circuit technologies are suitable for future wireless communications. To achieve low 1/f-noise characteristics in RF applications, a SiGe HBT with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, was developed. Aimed at ultra-low power consumption in a wide range of microwave applications, a SiGe HBT fabricated by well-controlled SiGe/Si continuous epitaxial growth was developed. To improve the design process for Si-based RF-ICs, equivalent circuits for transmission lines under the slow-wave effect and for inductors under the peripheral ground effect were also demonstrated. Moreover, MMICs operating in the quasi-millimeter-wave region, namely, two 24-GHz LNAs, a 27-GHz VCO, and a 24-GHz mixer were developed. In regards to these MMICs, new circuit technologies, namely, inductive biasing, merged transformer matching, and pseudo-stacked configuration, were developed.

Original languageEnglish
Title of host publicationECS Transactions - ULSI Process Integration 6
Pages137-150
Number of pages14
Edition7
DOIs
Publication statusPublished - 2009 Dec 1
Externally publishedYes
EventULSI Process Integration 6 - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 2009 Oct 42009 Oct 9

Publication series

NameECS Transactions
Number7
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherULSI Process Integration 6 - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period09/10/409/10/9

ASJC Scopus subject areas

  • Engineering(all)

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