TY - GEN
T1 - Low-power SiGe HBT and circuit technology for future quasi-millimeter-wave wireless communications
AU - Washio, K.
AU - Shiramizu, N.
AU - Miura, M.
AU - Nakamura, T.
AU - Oda, K.
AU - Masuda, T.
PY - 2009
Y1 - 2009
N2 - SiGe HBTs and their circuit technologies are suitable for future wireless communications. To achieve low 1/f-noise characteristics in RF applications, a SiGe HBT with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, was developed. Aimed at ultra-low power consumption in a wide range of microwave applications, a SiGe HBT fabricated by well-controlled SiGe/Si continuous epitaxial growth was developed. To improve the design process for Si-based RF-ICs, equivalent circuits for transmission lines under the slow-wave effect and for inductors under the peripheral ground effect were also demonstrated. Moreover, MMICs operating in the quasi-millimeter-wave region, namely, two 24-GHz LNAs, a 27-GHz VCO, and a 24-GHz mixer were developed. In regards to these MMICs, new circuit technologies, namely, inductive biasing, merged transformer matching, and pseudo-stacked configuration, were developed.
AB - SiGe HBTs and their circuit technologies are suitable for future wireless communications. To achieve low 1/f-noise characteristics in RF applications, a SiGe HBT with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, was developed. Aimed at ultra-low power consumption in a wide range of microwave applications, a SiGe HBT fabricated by well-controlled SiGe/Si continuous epitaxial growth was developed. To improve the design process for Si-based RF-ICs, equivalent circuits for transmission lines under the slow-wave effect and for inductors under the peripheral ground effect were also demonstrated. Moreover, MMICs operating in the quasi-millimeter-wave region, namely, two 24-GHz LNAs, a 27-GHz VCO, and a 24-GHz mixer were developed. In regards to these MMICs, new circuit technologies, namely, inductive biasing, merged transformer matching, and pseudo-stacked configuration, were developed.
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U2 - 10.1149/1.3203950
DO - 10.1149/1.3203950
M3 - Conference contribution
AN - SCOPUS:74349094185
SN - 9781566777445
T3 - ECS Transactions
SP - 137
EP - 150
BT - ECS Transactions - ULSI Process Integration 6
PB - Electrochemical Society Inc.
T2 - ULSI Process Integration 6 - 216th Meeting of the Electrochemical Society
Y2 - 4 October 2009 through 9 October 2009
ER -