Low-power K-band pseudo-stacked mixer with linearity enhancement technique

Nobuhiro Shiramizu; Toru Masuda; Takahiro Nakamura; Katsuyoshi Washio

doi:10.1109/BIPOL.2009.5314143

Low-power K-band pseudo-stacked mixer with linearity enhancement technique

Nobuhiro Shiramizu, Toru Masuda, Takahiro Nakamura, Katsuyoshi Washio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

A low-power transmitter mixer and a receiver mixer operating in the K-band frequency region have been developed. Both mixers can be operated at a low supply voltage of 1.5 V because of a pseudo-stacked configuration using an on-chip transformer. For the transmitter mixer, an emitter degeneration resistor in parallel with a capacitor is introduced to obtain both high linearity and high-gain. Moreover, an emitter degeneration inductor of the receiver mixer improves the linearity characteristics. The proposed mixers are fabricated using 0.18-μm SiGe BiCMOS technology. The transmitter mixer achieves a conversion gain of -0.1 dB, input P1dB of -11 dBm, and IIP3 of -1.2 dBm. The receiver mixer achieves a conversion gain of 11.2 dB, input P1dB of -23 dBm, and IIP3 of -13 dBm. These results indicate that these mixer design techniques are suitable to be applied for low-power transceivers within the quasi-millimeter-wave frequency region.

Original language	English
Title of host publication	2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009
Pages	59-62
Number of pages	4
DOIs	https://doi.org/10.1109/BIPOL.2009.5314143
Publication status	Published - 2009 Dec 28
Externally published	Yes
Event	2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009 - Capri, Italy Duration: 2009 Oct 12 → 2009 Oct 14

Publication series

Name	Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)	1088-9299

Other

Other	2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009
Country/Territory	Italy
City	Capri
Period	09/10/12 → 09/10/14

Keywords

High linearity
Low power
Low voltage
Mixer
On-chip transformer
Quasi-millimeter-wave

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/BIPOL.2009.5314143

Cite this

Low-power K-band pseudo-stacked mixer with linearity enhancement technique. / Shiramizu, Nobuhiro; Masuda, Toru; Nakamura, Takahiro et al.

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009. 2009. p. 59-62 5314143 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shiramizu, N, Masuda, T, Nakamura, T & Washio, K 2009, Low-power K-band pseudo-stacked mixer with linearity enhancement technique. in 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009., 5314143, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 59-62, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009, Capri, Italy, 09/10/12. https://doi.org/10.1109/BIPOL.2009.5314143

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abstract = "A low-power transmitter mixer and a receiver mixer operating in the K-band frequency region have been developed. Both mixers can be operated at a low supply voltage of 1.5 V because of a pseudo-stacked configuration using an on-chip transformer. For the transmitter mixer, an emitter degeneration resistor in parallel with a capacitor is introduced to obtain both high linearity and high-gain. Moreover, an emitter degeneration inductor of the receiver mixer improves the linearity characteristics. The proposed mixers are fabricated using 0.18-μm SiGe BiCMOS technology. The transmitter mixer achieves a conversion gain of -0.1 dB, input P1dB of -11 dBm, and IIP3 of -1.2 dBm. The receiver mixer achieves a conversion gain of 11.2 dB, input P1dB of -23 dBm, and IIP3 of -13 dBm. These results indicate that these mixer design techniques are suitable to be applied for low-power transceivers within the quasi-millimeter-wave frequency region.",

keywords = "High linearity, Low power, Low voltage, Mixer, On-chip transformer, Quasi-millimeter-wave",

author = "Nobuhiro Shiramizu and Toru Masuda and Takahiro Nakamura and Katsuyoshi Washio",

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N2 - A low-power transmitter mixer and a receiver mixer operating in the K-band frequency region have been developed. Both mixers can be operated at a low supply voltage of 1.5 V because of a pseudo-stacked configuration using an on-chip transformer. For the transmitter mixer, an emitter degeneration resistor in parallel with a capacitor is introduced to obtain both high linearity and high-gain. Moreover, an emitter degeneration inductor of the receiver mixer improves the linearity characteristics. The proposed mixers are fabricated using 0.18-μm SiGe BiCMOS technology. The transmitter mixer achieves a conversion gain of -0.1 dB, input P1dB of -11 dBm, and IIP3 of -1.2 dBm. The receiver mixer achieves a conversion gain of 11.2 dB, input P1dB of -23 dBm, and IIP3 of -13 dBm. These results indicate that these mixer design techniques are suitable to be applied for low-power transceivers within the quasi-millimeter-wave frequency region.

AB - A low-power transmitter mixer and a receiver mixer operating in the K-band frequency region have been developed. Both mixers can be operated at a low supply voltage of 1.5 V because of a pseudo-stacked configuration using an on-chip transformer. For the transmitter mixer, an emitter degeneration resistor in parallel with a capacitor is introduced to obtain both high linearity and high-gain. Moreover, an emitter degeneration inductor of the receiver mixer improves the linearity characteristics. The proposed mixers are fabricated using 0.18-μm SiGe BiCMOS technology. The transmitter mixer achieves a conversion gain of -0.1 dB, input P1dB of -11 dBm, and IIP3 of -1.2 dBm. The receiver mixer achieves a conversion gain of 11.2 dB, input P1dB of -23 dBm, and IIP3 of -13 dBm. These results indicate that these mixer design techniques are suitable to be applied for low-power transceivers within the quasi-millimeter-wave frequency region.

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KW - Low power

KW - Low voltage

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KW - On-chip transformer

KW - Quasi-millimeter-wave

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Low-power K-band pseudo-stacked mixer with linearity enhancement technique

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