We report record unloaded ring oscillator delay (17ps at V DD=1.1V and 20pA/μm Ioff) using low power CMOS transistors with Ni-based fully silicided (FUSI) gates on HfSiON. This result comes from two key advancements over our previous report . First, we have improved the (unstrained) devices Idsat to be 560/245μA/μm for nMOS/pMOS at an Ioff=20pA/μm and VDD=1.1V. Second, we demonstrate that the use of metal gates enables a reduction of the junction anneal temperature, yielding an Lgmin reduction of 7nm/14nm for nMOS/pMOS over our Poly-Si/SiON reference. We also report for the first time that metal gate on HfSiON devices can outperform optimized conventional Poly-Si/SiON devices by up to 25% in unloaded ring oscillator speed. Finally, our study shows that there is no intrinsic difference between Ni-FUSI compared to inserted metal gates (TiN, TaN).