Abstract
We report record unloaded ring oscillator delay (17ps at V DD=1.1V and 20pA/μm Ioff) using low power CMOS transistors with Ni-based fully silicided (FUSI) gates on HfSiON. This result comes from two key advancements over our previous report [1]. First, we have improved the (unstrained) devices Idsat to be 560/245μA/μm for nMOS/pMOS at an Ioff=20pA/μm and VDD=1.1V. Second, we demonstrate that the use of metal gates enables a reduction of the junction anneal temperature, yielding an Lgmin reduction of 7nm/14nm for nMOS/pMOS over our Poly-Si/SiON reference. We also report for the first time that metal gate on HfSiON devices can outperform optimized conventional Poly-Si/SiON devices by up to 25% in unloaded ring oscillator speed. Finally, our study shows that there is no intrinsic difference between Ni-FUSI compared to inserted metal gates (TiN, TaN).
Original language | English |
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Title of host publication | 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers |
Pages | 154-155 |
Number of pages | 2 |
Publication status | Published - 2006 |
Externally published | Yes |
Event | 2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States Duration: 2006 Jun 13 → 2006 Jun 15 |
Publication series
Name | Digest of Technical Papers - Symposium on VLSI Technology |
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ISSN (Print) | 0743-1562 |
Other
Other | 2006 Symposium on VLSI Technology, VLSIT |
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Country/Territory | United States |
City | Honolulu, HI |
Period | 06/6/13 → 06/6/15 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering